Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

M. Campajola; F. Di Capua; D. Fiore; E. Sarnelli; A. Aloisio

doi:10.1016/j.nima.2019.162722

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arXiv · 2208.01109

Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes

M. Campajola·F. Di Capua·D. Fiore·E. Sarnelli·A. Aloisio

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Abstract

Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device manufactured using a 150-nm CMOS process are presented. An irradiation campaign has been carried out with protons of 20 MeV and 24 MeV on several samples of a test chip containing SPADs arrays with two different junction layouts. The dark count rate distributions have been analyzed as a function of the displacement damage dose. Annealing and cooling have been investigated as possible damage mitigation approaches. We also discuss, through a space radiation simulation, the suitability of such devices on several space mission case-studies.

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M. Campajola, F. Di Capua, D. Fiore, E. Sarnelli, A. Aloisio. 2022-08-01. Proton induced Dark Count Rate degradation in 150-nm CMOS Single-Photon Avalanche Diodes. https://doi.org/10.1016/j.nima.2019.162722

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