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arXiv · 2208.11578

Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS

Tihomir Knežević·Tomislav Brodar·Vladimir Radulović·Luka Snoj·Takahiro Makino·Ivana Capan
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Abstract

We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, Ec-0.4eV and Ec-0.7eV. They were previously assigned to carbon interstitial (Ci) labeled as EH1/3 and silicon-vacancy (VSi) labeled as S1/2, for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH1 and S1 defects. We show that EH1 consists of a single emission line arising from the Ci(h), while S1 has two emission lines arising from the VSi(h) and VSi(k) lattice sites.

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Tihomir Knežević, Tomislav Brodar, Vladimir Radulović, Luka Snoj, Takahiro Makino, Ivana Capan. 2022-08-24. Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS. https://doi.org/10.35848/1882-0786%2Fac8f83

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