arXiv · 2210.13192
Silicon $4\pi$ spectrometer for $\beta$-decay electrons with energies up to 3~MeV
Abstract
We present a description of the originally developed $\beta$-spectrometer consisting of two Si(Li)-detectors with sensitive area thickness above 8~mm and $4\pi$-geometry. The full absorption spectrometer allows for direct measurements of $\beta$-spectra, disregarding the corrections to the response function induced by the electron backscattering from the crystal surface. In case of $\beta$-spectra of transitions to the excited state of the daughter isotope additional 3" BGO-detector is used in order to detect the $\gamma$-quanta in coincidence with the pair of Si(Li)-spectrometers.
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I. E. Alexeev, S. V. Bakhlanov, E. A. Chmel, A. V. Derbin, I. S. Drachnev, I. M. Kotina, M. S. Mikulich, V. N. Muratova, N. V. Nyazova, D. A. Semenov, M. V. Trushin, E. V. Unzhakov. 2022-10-21. Silicon $4\pi$ spectrometer for $\beta$-decay electrons with energies up to 3~MeV. https://arxiv.org/abs/2210.13192
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