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arXiv · 2212.04504

Doped Semiconductor Devices for sub-MeV Dark Matter Detection

Peizhi Du·Daniel Egaña-Ugrinovic·Rouven Essig·Mukul Sholapurkar
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Abstract

Dopant atoms in semiconductors can be ionized with $\sim10$ meV energy depositions, allowing for the design of low-threshold detectors. We propose using doped semiconductor targets to search for sub-MeV dark matter scattering or sub-eV dark matter absorption on electrons. Currently unconstrained cross sections could be tested with a 1 g-day exposure in a doped detector with backgrounds at the level of existing pure semiconductor detectors, but improvements would be needed to probe the freeze-in target. We discuss the corresponding technological requirements and lay out a possible detector design.

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Peizhi Du, Daniel Egaña-Ugrinovic, Rouven Essig, Mukul Sholapurkar. 2022-12-08. Doped Semiconductor Devices for sub-MeV Dark Matter Detection. https://arxiv.org/abs/2212.04504

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