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arXiv · 2305.06602

Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure

Jialin Li·Lizhen Wang·Yuzhong Chen·Yujie Li·Haiming Zhu·Linjun Li·Limin Tong1
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Abstract

Interface interactions in 2D vertically stacked heterostructures play an important role in optoe-lectronic applications, photodetectors based on graphene/InSe heterostructures had shown promising performance nowadays. However, nonlinear optical properties studies based on the graphene/InSe heterostructure was insufficient. Here, we fabricated graphene/InSe heterostruc-ture by mechanical exfoliation, and investigated the optically induced charge transfer between graphene/InSe heterostructures by taking photoluminescence and pump-probe measurements. The large built-in electric field at the interface is confirmed by Kelvin probe force microscopy. Furthermore, due to the efficient interfacial carrier transfer driven by built-in electric potential (~ 286 meV) and broadband nonlinear absorption, the application of graphene/InSe heterostruc-ture in mode-locked laser is realized. Our work not only provides a deeper understanding for the dipole orientation related interface interactions on the photoexcited charge transfer of gra-phene/InSe heterostructure, but also enrich the saturable absorber family for ultrafast photon-ics application.

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Jialin Li, Lizhen Wang, Yuzhong Chen, Yujie Li, Haiming Zhu, Linjun Li, Limin Tong1. 2023-05-11. Interfacial Charge Transfer and Ultrafast Photonics Application of 2D Graphene/InSe Heterostructure. https://doi.org/10.3390/nano13010147

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