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arXiv · 2305.19009

Perpendicular in-plane negative magnetoresistance in ZrTe5

Ning Ma·Xiao-Bin Qiang·Zhijian Xie·Yu Zhang·Shili Yan·Shimin Cao·Peipei Wang·Liyuan Zhang·G. D. Gu·Qiang Li·X. C. Xie·Hai-Zhou Lu·Xinjian Wei·Jian-Hao Chen
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Abstract

The unique band structure in topological materials frequently results in unusual magneto-transport phenomena, one of which is in-plane longitudinal negative magnetoresistance (NMR) with the magnetic field aligned parallel to the electrical current direction. This NMR is widely considered as a hallmark of chiral anomaly in topological materials. Here we report the observation of in-plane NMR in the topological material ZrTe5 when the in-plane magnetic field is both parallel and perpendicular to the current direction, revealing an unusual case of quantum transport beyond the chiral anomaly. We find that a general theoretical model, which considers the combined effect of Berry curvature and orbital moment, can quantitatively explain this in-plane NMR. Our results provide new insights into the understanding of in-plane NMR in topological materials.

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Ning Ma, Xiao-Bin Qiang, Zhijian Xie, Yu Zhang, Shili Yan, Shimin Cao, Peipei Wang, Liyuan Zhang, G. D. Gu, Qiang Li, X. C. Xie, Hai-Zhou Lu, Xinjian Wei, Jian-Hao Chen. 2023-05-30. Perpendicular in-plane negative magnetoresistance in ZrTe5. https://arxiv.org/abs/2305.19009

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