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arXiv · 2308.06575

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Jie Zhou·Ashok Dheenan·Jiarui Gong·Carolina Adamo·Patrick Marshall·Moheb Sheikhi·Tsung-Han Tsai·Nathan Wriedt·Clincy Cheung·Shuoyang Qiu·Tien Khee Ng·Qiaoqiang Gan·Gambin Vincent·Boon S. Ooi·Siddharth Rajan·Zhenqiang Ma
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Abstract

Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.

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Jie Zhou, Ashok Dheenan, Jiarui Gong, Carolina Adamo, Patrick Marshall, Moheb Sheikhi, Tsung-Han Tsai, Nathan Wriedt, Clincy Cheung, Shuoyang Qiu, Tien Khee Ng, Qiaoqiang Gan, Gambin Vincent, Boon S. Ooi, Siddharth Rajan, Zhenqiang Ma. 2023-08-12. Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions. https://arxiv.org/abs/2308.06575

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