arXiv subjects

Boon S. Ooi

Publications and source records attributed to Boon S. Ooi.

At least 19 recordsLinked to original sources

arXiv2026

Enhanced Third-Harmonic Generation in a Bound State in the Continuum Assisted Multiband All-Dielectric Metasurface

Multiband Fano resonances are demonstrated in the near-infrared (near-IR) using an all-dielectric metasurface whose unit cell consists of four silicon nanoblocks on a glass substrate. An in-plane asymmetry triggers symmetry-protected quasi-bound states in the continuum (QBICs), producing multiple high-Q resonances. Their origin is identified through multipolar decomposition of the scattering cross section and field distributions at the resonances. The strong field localization at these resonances enables efficient multiband third-harmonic (TH) generation in the ultraviolet (UV), with a maximum simulated conversion efficiency of $8.5 \times 10^{-3}$ at a peak pump intensity of $1.6\,\mathrm{GW/cm^{2}}$. The metasurface is fabricated in symmetric and asymmetric configurations, and its linear and nonlinear responses are measured under normal incidence. A TH conversion efficiency of $1.2 \times 10^{-6}$ is obtained at a peak pump intensity of $3.25\,\mathrm{GW/cm^{2}}$. These results establish a route to multiband photonic devices, including multiwavelength lasers, multiband harmonic generation, and single-photon sources for quantum photonics.

physics.optics↗

arXiv2026

Multiband Hybrid Metasurface for Enhanced Second-Harmonic Generation via Coupled Gap Surface Plasmon Modes

A multiband hybrid metasurface supporting multiple gap-surface plasmon (GSP) and localized surface plasmon (LSP) modes is presented. The structure adopts a metal-dielectric-metal configuration consisting of an aluminum bottom layer, a silicon dioxide spacer, and a bar-disc hybrid resonator patterned in the top aluminum layer. Optimized geometrical parameters yield four distinct resonances across the near-infrared and telecommunication bands, arising from the interplay between GSP modes and LSP excitations. The reflectance spectra are systematically analyzed as functions of geometric parameters and polarization, demonstrating tunable multiband operation. Experimental measurements of the fabricated metasurface show good agreement with numerical predictions. Furthermore, the second-harmonic generation (SHG) response is numerically investigated, revealing enhanced SH emission at the resonance wavelengths due to strong electromagnetic field confinement within the metal-dielectric-metal cavity. The proposed metasurface provides a compact platform for multiband and multifunctional nanophotonic applications.

physics.optics↗

arXiv2026

Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface

Ultrawide-bandgap AlN is a promising material for next-generation power electronics; however, its practical implementation is hindered by unstable surface chemistry and the high activation energy of p-type dopants. In particular, high-temperature rapid thermal annealing (RTA), required for forming low-resistance contacts on n-type AlN, leads to the formation of thick and defective surface oxides that degrade heterojunction performance. In this work, we present an interface engineering approach based on fluorination-induced AlFx formation combined with SiNx passivation to suppress defect-assisted leakage in p-Si/n-AlN heterojunction diodes fabricated via semiconductor grafting. A low-damage pseudo-atomic layer etching process is employed to remove RTA-induced oxides and restore a near-stoichiometric AlN surface. Subsequent XeF2 treatment forms an ultrathin AlFx layer, which is stabilized by an atomic-layer-deposited SiNx capping layer prior to p-Si nanomembrane integration. Electrical measurements show that the engineered AlFx/SiNx interface reduces reverse leakage current by several orders of magnitude compared to untreated or oxide-removed AlN surfaces, while preserving forward conduction characteristics. Temperature-dependent analysis indicates strong suppression of Poole-Frenkel emission and a shift of leakage onset to higher reverse bias, ultimately limited by bulk AlN crystal quality. X-ray photoelectron spectroscopy and transmission electron microscopy confirm the formation of Al-F bonds, reduced Al-O content, and the presence of a thin interfacial SiOx/SiON layer. These results establish AlFx/SiNx passivation as an effective strategy for stabilizing AlN interfaces and enabling low-leakage ultrawide-bandgap heterojunction devices.

cond-mat.mtrl-sci↗

arXiv2025

Preliminary Demonstration of Diamond-GaN pn Diodes via Grafting

Ultrawide bandgap (UWBG) semiconductors exhibit exceptional electrical and thermal properties, offering strong potential for high power and high frequency electronics. However, efficient doping in UWBG materials is typically limited to either n type or p type, constraining their application to unipolar devices. The realization of pn junctions through heterogeneous integration of complementary UWBG or WBG semiconductors is hindered by lattice mismatch and thermal expansion differences. Here, we report the preliminary demonstration of diamond GaN heterojunction pn diodes fabricated via grafting. A single crystalline p plus diamond nanomembrane was integrated onto an epitaxially grown c plane n plus GaN substrate with an ultrathin ALD Al2O3 interlayer. The resulting diodes exhibit an ideality factor of 1.55 and a rectification ratio of over 1e4. Structural and interfacial properties were examined by AFM, XRD, Raman, and STEM, providing critical insights to guide further optimization of diamond GaN pn heterojunction devices.

cond-mat.mtrl-sci↗

arXiv2024

Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions

Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challenging, limiting both scalability and device performance. Semiconductor grafting offers a promising solution by directly forming electrically active, lattice-mismatched heterojunctions between dissimilar materials. However, its scalability and uniformity at the wafer level have yet to be demonstrated. This work demonstrates the achievement of highly uniform, reproducible results across silicon, sapphire, and gallium nitride (GaN) substrates using wafer-scale semiconductor grafting. To illustrate this scalability, we conducted an in-depth study of a grafted Si/GaN heterojunction, examining band alignment through X-ray photoelectron spectroscopy and confirming crystallinity and interfacial integrity with scanning transmission electron microscopy. The resulting p-n diodes exhibit significantly enhanced electrical performance and wafer-scale uniformity compared to conventional approaches. This work establishes wafer-scale semiconductor grafting as a versatile and scalable technology, bridging the gap between laboratory-scale research and industrial manufacturing for heterogeneous semiconductor integration, and paving the way for novel, high-performance electronic and optoelectronic devices.

physics.app-ph↗

arXiv2024

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer

We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type degenerately doped GaAs (4E19 cm-3) nanomembrane (NM) onto single-crystalline n-type Si (5E19 cm-3) substrate. At the heterointerface, an amorphous ultrathin oxygen-enriched layer (UOL) was intentionally engineered through chemical oxidation and atomic layer deposition (ALD). Scanning transmission electron microscopy (STEM) confirmed the formation of the UOL and the single crystallinity of the grafted junction. The resulting tunnel diodes consistently exhibited negative differential resistance (NDR) behavior at room temperature, with a high maximum peak-to-valley current ratio (PVCR) of 36.38, valley voltages ranging from 1.3 to 1.8 V, and a peak tunneling current density of 0.95 kA/cm2. This study not only highlights the critical roles of the UOL as both an interface improvement layer and a quantum tunneling medium, but also establishes "semiconductor grafting" as an effective and versatile method for high-performance, lattice-mismatched heterojunction devices.

physics.app-ph↗

arXiv2023

Band alignment of grafted monocrystalline Si (001)/$β$-Ga$_2$O$_3$ (010) p-n heterojunction determined by X-ray photoelectron spectroscopy

Beta-phase gallium oxide ($β$-Ga$_2$O$_3$) research has gained accelerated pace due to its superiorly large bandgap and commercial availability of large-diameter native substrates. However, the high acceptor activation energy obstructs the development of homojunction bipolar devices employing $β$-Ga$_2$O$_3$. The recently demonstrated semiconductor grafting technique provides an alternative and viable approach towards lattice-mismatched $β$-Ga$_2$O$_3$-based p-n heterojunctions with high quality interfaces. Understanding and quantitatively characterizing the band alignment of the grafted heterojunctions is crucial for future bipolar device development employing the grafting method. In this work, we present a systematic study of the band alignment in the grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructure by employing X-ray photoelectron spectroscopy (XPS). The core level peaks and valence band spectra of the Si, $β$-Ga$_2$O$_3$, and the grafted heterojunction were carefully obtained and analyzed. The band diagrams of the Si/$β$-Ga$_2$O$_3$ heterostructure were constructed using two individual methods, the core level peak method and the valence band spectrum method, by utilizing the different portions of the measured data. The reconstructed band alignments of the Si/$β$-Ga$_2$O$_3$ heterostructure using the two different methods are identical within the error range. The band alignment is also consistent with the prediction from the electron affinity values of Si and $β$-Ga$_2$O$_3$. The study suggests that the interface defect density in grafted Si/$β$-Ga$_2$O$_3$ heterostructure is at a sufficiently low level such that Fermi level pinning at the interface has been completely avoided and the universal electron affinity rule can be safely employed to construct the band diagrams of grafted monocrystalline Si/$β$-Ga$_2$O$_3$ heterostructures.

cond-mat.mtrl-sci↗

arXiv2023

Demonstration of a monocrystalline GaAs-$β$-Ga$_2$O$_3$ p-n heterojunction

In this work, we report the fabrication and characterizations of a monocrystalline GaAs/$β$-Ga$_2$O$_3$ p-n heterojunction by employing semiconductor grafting technology. The heterojunction was created by lifting off and transfer printing a p-type GaAs single crystal nanomembrane to an Al$_2$O$_3$-coated n-type$β$-Ga$_2$O$_3$ epitaxial substrate. The resultant heterojunction diodes exhibit remarkable performance metrics, including an ideality factor of 1.23, a high rectification ratio of 8.04E9 at +/- 4V, and a turn on voltage of 2.35 V. Furthermore, at +5 V, the diode displays a large current density of 2500 A/cm$^2$ along with a low ON resistance of 2 m$Ω\cdot$cm$^2$.

physics.app-ph↗

arXiv2023

Initial demonstration of AlGaAs-GaAsP-beta-Ga2O3 n-p-n double heterojunctions

Beta phase gallium oxides, an ultrawide-bandgap semiconductor, has great potential for future power and RF electronics applications but faces challenges in bipolar device applications due to the lack of p-type dopants. In this work, we demonstrate monocrystalline AlGaAs_GaAsP_beta phase gallium oxides n-p-n double-heterojunctions, synthesized using semiconductor grafting technology. By transfer printing an n-AlGaAs_p-GaAsP nanomembrane to the n-beta phase-Ga$_2$O$_3$ epitaxial substrate, we simultaneously achieved AlGaAs_GaAsP epitaxial n-p junction diode with an ideality factor of 1.29 and a rectification ratio of 2.57E3 at +/- 2 V, and grafted GaAsP_beta_phase_gallium oxides p-n junction diode exhibiting an ideality factor of 1.36 and a rectification ratio of 4.85E2 at +/- 2 V.

physics.app-ph↗

arXiv2023

A high-order finite volume method for Maxwell's equations in heterogeneous and time-varying media

We develop a finite volume method for Maxwell's equations in materials whose electromagnetic properties vary in space and time. We investigate both conservative and non-conservative numerical formulations. High-order methods accurately resolve fine structures that develop due to the varying material properties. Numerical examples demonstrate the effectiveness of the proposed method in handling temporal variation and its efficiency relative to traditional 2nd-order FDTD.

physics.comp-ph↗

arXiv2023

Harnessing the Potential of Optical Communications for the Metaverse

The Metaverse is a digital world that offers an immersive virtual experience. However, the Metaverse applications are bandwidth-hungry and delay-sensitive that require ultrahigh data rates, ultra-low latency, and hyper-intensive computation. To cater for these requirements, optical communication arises as a key pillar in bringing this paradigm into reality. We highlight in this paper the potential of optical communications in the Metaverse. First, we set forth Metaverse requirements in terms of capacity and latency; then, we introduce ultra-high data rates requirements for various Metaverse experiences. Then, we put forward the potential of optical communications to achieve these data rate requirements in backbone, backhaul, fronthaul, and access segments. Both optical fiber and optical wireless communication (OWC) technologies, as well as their current and future expected data rates, are detailed. In addition, we propose a comprehensive set of configurations, connectivity, and equipment necessary for an immersive Metaverse experience. Finally, we identify a set of key enablers and research directions such as analog neuromorphic optical computing, optical intelligent reflective surfaces (IRS), hollow core fiber (HCF), and terahertz (THz).

eess.SP↗

arXiv2022

Maritime Communications: A Survey on Enabling Technologies, Opportunities, and Challenges

Water covers 71% of the Earth's surface, where the steady increase in oceanic activities has promoted the need for reliable maritime communication technologies. The existing maritime communication systems involve terrestrial, aerial, and satellite networks. This paper presents a holistic overview of the different forms of maritime communications and provides the latest advances in various marine technologies. The paper first introduces the different techniques used for maritime communications over the RF and optical bands. Then, we present the channel models for RF and optical bands, modulation and coding schemes, coverage and capacity, and radio resource management in maritime communications. After that, the paper presents some emerging use cases of maritime networks, such as the Internet of Ships (IoS) and the ship-to-underwater Internet of things (IoT). Finally, we highlight a few exciting open challenges and identify a set of future research directions for maritime communication, including bringing broadband connectivity to the deep sea, using THz and visible light signals for on-board applications, and data-driven modeling for radio and optical marine propagation.

cs.ET↗

arXiv2022

Protecting and Enhancing the Photoelectrocatalytic Nitrogen Reduction to Ammonia Performance of InGaN Nanowires using Mo2C Nanosheets and GaN Buffer Layer

Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C) co-catalyst assisted indium gallium nitride (InGaN) nanowires. The effect of aiding Mo2C on InGaN NWs arrests the dark current and demonstrated the saturation current under illumination was briefly elucidated. Large NH3 production of 7.2 gh-1cm-2 with high Faradaic efficiency of 12.6 % was realized at -0.2 V vs. reversible hydrogen electrode for the Mo2C/GaN/InGaN heterostructure. Notably, the proposed heterostructure also exemplifies excellent stability and reproducibility with excellent selectivity in the long-term chronoamperometry analysis. Further, the incorporation of GaN buffer layer in between Mo2C and InGaN NWs was deeply investigated. From Density Functional Theory (DFT) analysis, the incorporation of GaN buffer layer aids the suitable band edge position for the transfer of photogenerated charge carrier from InGaN to Mo2C co-catalyst, and unique 3d orbital of Mo2C is highly suitable to hold N2 for effective reduction to NH3.

cond-mat.mtrl-sci↗

arXiv2021

Influences of ALD Al$_2$O$_3$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar transistors has been impossible. The recently demonstrated approach of grafting n-type GaN with p-type semiconductors, like Si and GaAs, by employing ultrathin (UO) Al$_2$O$_3$ at the interface of Si/GaN and GaAs/GaN, has shown the feasibility to overcome the poor p-type doping challenge of GaN by providing epitaxy-like interface quality. However, the surface band-bending of GaN that could be influenced by the UO Al2O3 has been unknown. In this work, the band-bending of c-plane, Ga-face GaN with UO Al2O3 deposition at the surface of GaN was studied using X-ray photoelectron spectroscopy (XPS). The study shows that the UO Al2O3 can help in suppressing the upward band-bending of the c-plane, Ga-face GaN with a monotonic reduction trend of the upward band-bending energy from 0.48 eV down to 0.12 eV as the number of UO Al2O3 deposition cycles is increased from 0 to 20 cycles. The study further shows that the band-bending can be mostly recovered after removing the Al2O3 layer, concurring that the change in the density of fixed charge at the GaN surface caused by UO Al2O3 is the main reason for the surface band-bending modulation. The potential implication of the surface band-bending results of AlGaAs/GaAs/GaN npn heterojunction bipolar transistor (HBT) was preliminarily studied via Silvaco(R) simulations.

physics.app-ph↗

arXiv2021

Retrofitting FSO Systems in Existing RF Infrastructure: A Non-Zero Sum Game Technology

Progress in optical wireless communication (OWC) has unleashed the potential to transmit data in an ultra-fast manner without incurring large investments and bulk infrastructure. OWC includes wireless data transmissions in three optical sub-bands; ultraviolet, visible, and infrared. This paper discusses installing infrared OWC, known as free space optics (FSO), systems on top of installed radio frequency (RF) networks for outdoor applications to benefit from the reliability of RF links and the unlicensed broad optical spectrum, and the large data rates carried by laser beams propagating in free space. We equally review commercially available solutions and the hardware requirements for RF and FSO technology co-existence. The potential of hybrid RF/FSO for space communication is further discussed. Finally, open problems and future research directions are presented.

cs.ET↗

arXiv2020

Graded nanocomposite metamaterials for a double-sided radiative cooling architecture with a record breaking cooling power density

As an emerging electricity-free cooling technology, radiative cooling employs outer space as the heat sink. With this, a sky-facing thermal emitter is usually required. Due to the black-body radiation limit at ambient temperature, the maximum cooling power density for a single-faced radiative cooling device is ~156.9 W/m2. Here we report a double-sided radiative cooling architecture using graded nanocomposite metamaterials (GNM) designed for a vertically aligned thermal emitter. This GNM structure possesses an optical absorption of over 90% throughout the solar spectrum, and exceeds 90% reflection in the mid-infrared spectral region. With this configuration, both sides of a planar thermal emitter can be used to perform radiative cooling and a record cooling power density beyond 280 W/m2 was realized in a single thin-film thermal emitter. Under the standard pressure, we realized a temperature reduction of 14 degree Celsius below the ambient temperature in the laboratory environment, and over 12 degree Celsius in the outdoor test.

physics.app-ph↗

arXiv2019

A Unified Statistical Model for Atmospheric Turbulence-Induced Fading in Orbital Angular Momentum Multiplexed FSO Systems

This paper proposes a unified statistical channel model to characterize the atmospheric turbulence induced distortions faced by orbital angular momentum (OAM) in free space optical (FSO) communication systems. In this channel model, the self-channel irradiance of OAM modes as well as crosstalk irradiances between different OAM modes are characterized by a Generalized Gamma distribution (GGD). The latter distribution is shown to provide an excellent match with simulated data for all regimes of atmospheric turbulence. Therefore, it can be used to overcome the computationally complex numerical simulations to model the propagation of OAM modes through atmospheric turbulent FSO channels. The GGD allows obtaining very simple tractable closed-form expressions for a variety of performance metrics. Indeed, the average capacity, the bit-error rate, and the outage probability are derived for FSO systems using single OAM mode transmission with direct detection. Furthermore, we extend our study to FSO systems using OAM mode diversity to improve the performance. By using a maximum ratio combining (MRC) at the receiver, the GGD is also shown to fit the simulated combined received optical powers. Finally, space-time (ST) coding is proposed to provide diversity and multiplexing gains, and the error probability is theoretically derived under the newly proposed generic model.

eess.SP↗

arXiv2019

Towards Self-Powered Internet of Underwater Things Devices

Exploiting light beams to carry information and deliver power is mooted as a potential technology to recharge batteries of future generation Internet of things (IoT) and Internet of underwater things (IoUT) devices while providing optical connectivity. Simultaneous lightwave information and power transfer (SLIPT) has been recently proposed as an efficient way for wireless power transfer between communicating terminals. In this article, we provide an overview of the various SLIPT techniques in time, power, and space domains. We additionally demonstrate two SLPIT scenarios through underwater channels. Moreover, we discuss the open issues related to the hardware as well as system deployment in harsh environments.

eess.SP↗