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arXiv · 2309.12051

A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory

Laura Bégon-Lours·Mattia Halter·Diana Dávila Pineda·Valeria Bragaglia·Youri Popoff·Antonio La Porta·Daniel Jubin·Jean Fompeyrine·Bert Jan Offrein
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Abstract

A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO4 layer is fabricated at a low thermal budget (~375C), enabling BEOL processes and CMOS integration. The devices show suitable properties for integration in crossbar arrays and neural network inference: analog potentiation/depression with constant field or constant pulse width schemes, cycle to cycle and device to device variation <10%, ON/OFF ratio up to 10 and good linearity. The physical mechanisms behind the resistive switching and conduction mechanisms are discussed.

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Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Valeria Bragaglia, Youri Popoff, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein. 2023-09-21. A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory. https://doi.org/10.1109/imw51353.2021.9439611

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