Measurement of the electron-hole pair creation energy in a 4H-SiC p-n diode

Abstract

For 4H silicon carbide (4H-SiC), the values for the electron-hole pair creation energy $\epsilon_{\text{i}}$ published in the literature vary significantly. This work presents an experimental determination of $\epsilon_{\text{i}}$ using $50$ $\mu$m 4H-SiC p-n diodes designed for particle detection in high-energy physics. The detector response was measured for $\alpha$ particles between 4.2 MeV and 5.6 MeV for 4H-SiC and a silicon reference device. Different $\alpha$ energies were obtained by using multiple nuclides and varying the effective air gap between the $\alpha$ source and the detector. The energy deposited in the detectors was determined using a Monte Carlo simulation, taking into account the device cross-sections. A linear fit of the detector response to the deposited energy yields $\epsilon_{\text{i}} = (7.83 \pm 0.02)\;\text{eV}$, which agrees well with the most recent literature. For the 4H-SiC detectors, a linewidth of 28 keV FWHM was achieved, corresponding to an energy resolution of 0.5\%.