Evidence of Charge Multiplication in Thin $25 \mathrm{\mu m} \times 25 \mathrm{\mu m}$ Pitch 3D Silicon Sensors

Abstract

Characterization measurements of $25~\mathrm{\mu m} \times 25~\mathrm{\mu m}$ pitch 3D silicon sensors are performed, for devices with active thickness of $150~\mu$m. Evidence of charge multiplication caused by impact ionization below the breakdown voltage is observed in sensors operated at $-45~^\circ\mathrm{C}$. Small-pitch 3D silicon sensors have potential as high precision 4D tracking detectors that are also able to withstand radiation fluences beyond $10^{16}$~n$_{\rm eq}/$cm$^2$. This is applicable for use at future facilities such as the High-Luminosity Large Hadron Collider and the Future Circular Collider. Characteristics of these devices are compared to those of similar sensors of pitch $50~\mathrm{\mu m}\times 50~\mathrm{\mu m}$, showing comparable charge collection at low voltage, and acceptable leakage current, depletion voltage, breakdown voltage, and capacitance despite the extremely small cell size. The unirradiated $25~\mathrm{\mu m} \times 25~\mathrm{\mu m}$ sensors exhibit charge multiplication above about 90 V reverse bias, while, as predicted, no multiplication is observed in the $50~\mathrm{\mu m} \times 50~\mathrm{\mu m}$ sensors below their breakdown voltage. The maximum gain observed below breakdown is 1.33.