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arXiv · 2410.06181

Ion-Assisted Nanoscale Material Engineering in Atomic Layers

Abstract

Achieving deterministic control over the properties of low-dimensional materials with nanoscale precision is a long-sought goal. Mastering this capability has a transformative impact on the design of multifunctional electrical and optical devices. Here, we present an ion-assisted synthetic technique that enables precise control over the material composition and energy landscape of two-dimensional (2D) atomic crystals. Our method transforms binary transition metal dichalcogenides (TMDs), like MoSe$_2$, into ternary MoS$_{2\alpha}$Se$_{2(1-{\alpha}})$ alloys with systematically adjustable compositions, ${\alpha}$. By piecewise assembly of the lateral, compositionally modulated MoS$_{2\alpha}$Se$_{2(1-{\alpha})}$ segments within 2D atomic layers, we present a synthetic pathway towards the realization of multi-compositional designer materials. Our technique enables the fabrication of complex structures with arbitrary boundaries, dimensions as small as 30 nm, and fully customizable energy landscapes. Our optical characterizations further showcase the potential for implementing tailored optoelectronics in these engineered 2D crystals.

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Hossein Taghinejad, Mohammad Taghinejad, Sajjad Abdollahramezani, Qitong Li, Eric V. Woods, Mengkun Tian, Ali A. Eftekhar, Yuanqi Lyu, Xiang Zhang, Pulickel M. Ajayan, Wenshan Cai, Mark L. Brongersma, James G. Analytis, Ali Adibi. 2024-10-08. Ion-Assisted Nanoscale Material Engineering in Atomic Layers. https://arxiv.org/abs/2410.06181

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