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arXiv · 2504.21265

Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES)

Dongxun Yang·Tonouchi Masayoshi
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Abstract

Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response to the interface electric field, the amplitude of the THz emission peak in time-domain spectroscopy encapsulates rich information regarding MOS properties, notably the flat-band voltage. This paper concentrates on the precise quantitative estimation of the flat-band voltage within the Si MOS structure, elucidating the intricacies of the estimation process through the THz emission model.

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Dongxun Yang, Tonouchi Masayoshi. 2025-04-30. Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES). https://doi.org/10.1142/s0129156424400184

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