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arXiv · 2505.12219

Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures

Zhenghang Zhi·Hanzhi Ruan·Jiuming Liu·Xinpeng Li·Yong Zhang·Qi Yao·Chenjia Tang·Yujie Xiao·Xufeng Kou
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Abstract

We report the epitaxial growth of high-quality Al0.8Ga0.2Sb-InAs-Al0.8Ga0.2Sb quantum well films featured by high carrier mobility and strong spin-orbit coupling. By appropriately optimizing the Al-to-Ga ratio in the AlGaSb barrier layer, the quantum confinement of the heterostructure is significantlyenhanced, which results in both an ultra-high electron mobility of 924000 cm2/Vs and a giant magnetoresistance ratio of 365000 at low temperatures. Meanwhile, pronounced Shubnikov-deHaas quantum oscillations persist up to 30 K, and their single-frequency feature indicates a well defined Fermi surface without subband mixing in the two-dimensional electron gas channel. Moreover, the large effective g-factor of 12.93 leads to the observation of Zeeman splitting at large magnetic fields. Our results validate the AlGaSb/InAs quantum well heterostructures as a suitable candidate for constructing energy-efficient topological spintronic devices.

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Zhenghang Zhi, Hanzhi Ruan, Jiuming Liu, Xinpeng Li, Yong Zhang, Qi Yao, Chenjia Tang, Yujie Xiao, Xufeng Kou. 2025-05-18. Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures. https://arxiv.org/abs/2505.12219

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