Revisiting the Mechanisms of Thermal Transport in Vacancy-Defective Silicon

Abstract

Understanding heat conduction in defective silicon is crucial for electronics and thermoelectrics. Conventional understanding relies on phonon gas picture, treating defects as scattering centers that reduce phonon lifetimes without altering frequencies and group velocities. We go beyond phonon gas picture by employing Wigner transport equation to investigate heat conduction in vacancy-defected silicon. Our findings reveal that while thermal conduction in pristine silicon stems mainly from particle-like propagation of vibrational modes, wave-like tunnelling becomes increasingly significant in the presence of vacancies. Contrary to the conventional belief that defects only perturb mode lifetimes, we demonstrate that vacancies also diminish velocity operators, a dominant factor in thermal conductivity reduction, surpassing even the effect of lifetime shortening. Furthermore, incorporating anharmonic frequencies and interatomic force constants shows that while anharmonicity suppresses thermal conductivity in pristine silicon, this effect weakens with vacancy concentration and reverses to enhance conductivity. These findings challenge conventional knowledge and provide new insights into thermal conduction in defective materials.