Impact of irradiation conditions on the magnetic field sensitivity of spin defects in hBN nano flakes

Abstract

We study $V_{\mathrm{B}}^-$ centres generated by helium focused ion beam (FIB) irradiation in thin ($\sim$70 nm) hBN nanoflakes, in order to investigate the effect of implantation conditions on the key parameters that influence the magnetic field sensitivity of $V_{\mathrm{B}}^-$ quantum sensors. Using a combination of photoluminescence, optically detected magnetic resonance, and Raman spectroscopy, we examine the competing factors of maximising signal intensity through larger $V_{\mathrm{B}}^-$ concentration against the degradation in spin coherence and lattice quality observed at high ion fluences. Our results indicate that both the $V_{\mathrm{B}}^-$ spin properties and hBN lattice parameters are largely preserved up to an ion fluence of $10^{14}$ ions/cm$^2$, and beyond this significant degradation occurs in both. At the optimal implantation dose, an AC magnetic sensitivity of $\sim 1\,\mu\mathrm{T}/\sqrt{\mathrm{Hz}}$ is achieved. Using the patterned implantation enabled by the FIB, we find that $V_{\mathrm{B}}^-$ centres and the associated lattice damage are well localised to the implanted regions. This work demonstrates how careful selection of fabrication parameters can be used to optimise the properties of $V_{\mathrm{B}}^-$ centres in hBN, supporting their application as quantum sensors based on 2D materials.