arXiv subjects

John J. L. Morton

Publications and source records attributed to John J. L. Morton.

At least 19 recordsLinked to original sources

arXiv2026

Electrothermal behavior of superconducting nanowires buried in a commercial CMOS process

Superconducting films native to a commercial CMOS process enable co-integration of superconducting devices (high-kinetic-inductance elements and nanowire detectors) with cryogenic CMOS on one monolithic die. Such films are buried in the front-end-of-line, beneath the back-end-of-line metal stack, an environment that might quench a self-heated hot spot. Current-voltage characteristics are reported for titanium nitride (TiN) nanowires in the polycrystalline-silicon resistor layer of a 22 nm FD-SOI process, and measured retrapping currents are compared with thermal models for longitudinal conduction to the contacts and interfacial phonon cooling into the stack. The wires are strongly hysteretic, with switching-to-retrapping current ratios I_sw/I_r of 7.4-9.8, sustaining a normal hot spot. For two wires of length ell = 50 micrometers and widths W = 0.50 and 1.00 micrometers, over bath temperatures T_b = 0.15-1.19 K, I_r follows the interfacial form (T_hs^n - T_b^n)^(1/2) with n = 4 (T_hs, the effective hot-spot temperature), and is strongly inconsistent with the (T_hs - T_b)^(1/2) constant-kappa longitudinal-conduction limit; free-exponent fits give n = approximately 4.8-5.0. An effective cooling coefficient Sigma_K = 7.9(3) W/(m^2 K^4) describes the data: 31(21) times below the acoustic- (diffuse-) mismatch value for a single clean interface, and approximately 12 times below the lowest previously reported comparable nanowire coefficient. The model-based film thermal conductivity is kappa = approximately 20 mW/(m K). Across lengths ell = 1-50 micrometers, I_r matches neither ell^(-1) of pure longitudinal conduction nor ell^0 of pure interfacial cooling; a two-channel model reproduces I_r(ell) with crossover length ell* = approximately 3.5 micrometers predicted, to an O(1) prefactor, from Sigma_K and kappa.

physics.ins-det↗

arXiv2026

Programmable digital quantum simulation of 2D Fermi-Hubbard dynamics using 72 superconducting qubits

Simulating the time-dynamics of quantum many-body systems was the original use of quantum computers proposed by Feynman, motivated by the critical role of quantum interactions between electrons in the properties of materials and molecules. Accurately simulating such systems remains one of the most promising applications of general-purpose digital quantum computers, in which all the parameters of the model can be programmed and any desired physical quantity output. However, performing such simulations on today's quantum computers at a scale beyond the reach of classical methods requires advances in the efficiency of simulation algorithms and error mitigation techniques. Here we demonstrate programmable digital quantum simulation of the dynamics of the 2D Fermi-Hubbard model -- one of the best-known simplified models of electrons in crystalline solids -- at a scale beyond exact classical state-vector simulation. We implement simulations of this model on lattice sizes up to ${6\times 6}$ using 72 qubits on Google's Willow quantum processor, across a range of physical parameters, including different on-site electron-electron interaction strengths and magnetic flux values, and study phenomena including formation of magnetic polarons (charge carriers surrounded by local magnetic polarisation), dynamical symmetry-breaking in stripe-ordered states, attraction of charge carriers on an entangled background state known as a valence bond solid, and the approach to equilibrium through thermalisation. We validate our results against exact calculations in parameter regimes where these are feasible, and compare them to approximate classical simulations performed using tensor network and operator propagation methods. Our results demonstrate that meaningful programmable digital quantum simulation of many-body interacting electron models is now feasible on state-of-the-art quantum hardware.

quant-ph↗

arXiv2026

Stabilisation of NV centres in diamond nanopillars at low temperature

Degradation of near surface nitrogen vacancy (NV) centers in diamond under optical illumination has restricted their deployment in applications such as scanning NV magnetomety, particularly under harsh environment such as low temperatures and vacuum. Previously, alumina passivation of planar diamond samples has been shown to reduce the degradation of near surface ensemble NV centers in vacuum. Here, we expand this study to incorporate photonic nanostructures by analyzing the single photon emission characteristics of NV centers embedded in an array of alumina-coated diamond nanopillars in high vacuum and low temperature (6K, high vacuum) environments under non-resonant (522 nm) laser exposure. We find that, in contrast to the oxygen-terminated diamond nanopillars, NV centers in the alumina-coated nanopillars demonstrate negligible change in the single photon purity and brightness over the course of laser exposure in vacuum. At low temperature, NV centers under alumina termination demonstrate stable single photon emission, whereas under oxygen termination the single photon purity degrades under high intensity laser exposure. Alumina surface passivation is therefore shown as a viable path toward the realization of robust NV-diamond based nanoscale sensing under non-ambient atmospheric environments, including using diamond scanning probes.

physics.app-ph↗

arXiv2026

Radiofrequency cascade readout of coupled spin qubits

Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors, which add architectural complexity and limit qubit connectivity. In situ dispersive readout techniques are more compact, which can alleviate these constraints, but exhibit limited sensitivity. Here we report a radiofrequency electron-cascade readout method that enhances the dispersive signal through alternating-current electron co-tunnelling. With this approach, we achieve an enhancement in signal-to-noise ratio of more than $35~$dB, leading to a minimum integration time of $7.6 \pm 0.2~μ$s. We demonstrate singlet-triplet readout of two-electron spins in a natural silicon planar MOS quantum dot array, and coherent spin control using the exchange interaction, which forms the basis for entangling gates. We find dephasing times of up to $500~$ns and a gate quality factor that exceeds 10.

cond-mat.mes-hall↗

arXiv2026

A current source with metrological precision made on a 300mm silicon MOS process

Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The error rate of a source must be below 0.01 ppm, and many such sources must be operated in parallel to provide practically useful values of current in the nanoampere range. Achieving a single electron source using an industrial grade 300 mm wafer silicon metal oxide semiconductor (MOS) process could offer a powerful route for scaling, combined with the ability for integration with control and measurement electronics. Here, we present measurements of such a single-electron source indicating an error rate of 0.008 ppm, below the error threshold to satisfy the SI Ampere, and one of the lowest error rates reported, implemented using a gate-defined quantum dot device fabricated on an industry-grade silicon MOS process. Further evidence supporting the accuracy of the device is obtained by comparing the device performance to established models of quantum tunnelling, which reveal the mechanism of operation of our source at the single particle level. The low error rate observed in this device motivates the development of scaled arrays of parallel sources utilising Si MOS devices to realise a new generation of metrologically accurate current standards.

cond-mat.mes-hall↗

arXiv2025

Fermionic dynamics on a trapped-ion quantum computer beyond exact classical simulation

Simulation of the time-dynamics of fermionic many-body systems has long been predicted to be one of the key applications of quantum computers. Such simulations -- for which classical methods are often inaccurate -- are critical to advancing our knowledge and understanding of quantum chemistry and materials, underpinning a wide range of fields, from biochemistry to clean-energy technologies and chemical synthesis. However, the performance of all previous digital quantum simulations of fermions has been matched by classical methods, and it has thus far remained unclear whether near-term, intermediate-scale quantum hardware could offer any computational advantage in this area. Here, we implement an efficient quantum simulation algorithm on Quantinuum's System Model H2 trapped-ion quantum computer for the time dynamics of a 56-qubit system that is too complex for exact classical simulation. We focus on the periodic spinful 2D Fermi-Hubbard model and present evidence of spin-charge separation, where the elementary electron's charge and spin decouple. In the limited cases where ground truth is available through exact classical simulation, we find that it agrees with the results we obtain from the quantum device. Employing long-range Wilson operators to study deconfinement of the effective gauge field between spinons and the effective potential between charge carriers, we find behaviour that differs from predictions made by classical tensor network methods. Our results herald the use of quantum computing for simulating strongly correlated electronic systems beyond the capacity of classical computing.

quant-ph↗

arXiv2025

Nonclassicality of a Macroscopic Qubit-Ensemble via Parity Measurement Induced Disturbance

We propose an experimental scheme to test the nonclassicality of a macroscopic ensemble of qubits, through the violation of the classical notion of macrorealism (MR) via the fundamental measurement-induced disturbance of quantum systems. An electromagnetic resonator is used to probe the parity of the qubit-ensemble. The action of sequential measurements allows the nonclassicality of whole ensemble to manifest itself, in the ideal case, irrespective of its size. This enables to probe the macroscopic limits of quantum mechanics as the qubit-ensemble is, effectively, a single large spin of many $\hbar$ units. Even as $\hbar \rightarrow 0$ in comparison to the total angular momentum of the ensemble, a constant amount of violation of MR is found in the noiseless case. However, environmental decoherence and inhomogeneity of qubit-electromagnetic field couplings precipitate the quantum-to-classical transition. This implies that Bohr's correspondence principle is not fundamental, but a consequence of practical limitations. We outline an implementation with a variety of qubits (superconducting qubits, spins in semiconductors, and Rydberg atoms) coupled to a coplanar waveguide resonator, and - via the corresponding noise analysis - find that violation of MR is detectable up to $100$ qubits via current technology.

quant-ph↗

arXiv2025

Spin Readout in a 22 nm Node Integrated Circuit

Constructing a quantum computer capable of broad and important applications is likely to require millions of addressable physical qubits, posing the challenge of large-scale integration of quantum systems with classical electronics. Fully depleted silicon-on-insulator CMOS technology has been used to develop a range of cryogenic electronic components for the control and readout of different qubit modalities interfaced on separate chips. However, recent measurements of quantum dots on this technology raise the tantalising prospect of realising control electronics and spin qubits on the same manufacturing platform, within a single integrated circuit (IC). Here, we demonstrate single-shot spin readout in addressable quantum dot devices within an IC fabricated using industry-standard 22 nm fully depleted silicon-on-insulator technology. We achieve spin-to-charge conversion via a ramped energy-selective measurement, detected using a radio-frequency single-electron transistor and addressed by on-chip cryogenic electronics. The observation of consistent readout visibilities exceeding 90% and millisecond spin relaxation times in two nominally identical devices within the addressable array supports the reproducibility of the unit cell. The successful observation of spin readout using this CMOS process marks a key step towards realising highly scalable and integrated spin qubits.

quant-ph↗

arXiv2025

Impact of irradiation conditions on the magnetic field sensitivity of spin defects in hBN nano flakes

We study $V_{\mathrm{B}}^-$ centres generated by helium focused ion beam (FIB) irradiation in thin ($\sim$70 nm) hBN nanoflakes, in order to investigate the effect of implantation conditions on the key parameters that influence the magnetic field sensitivity of $V_{\mathrm{B}}^-$ quantum sensors. Using a combination of photoluminescence, optically detected magnetic resonance, and Raman spectroscopy, we examine the competing factors of maximising signal intensity through larger $V_{\mathrm{B}}^-$ concentration against the degradation in spin coherence and lattice quality observed at high ion fluences. Our results indicate that both the $V_{\mathrm{B}}^-$ spin properties and hBN lattice parameters are largely preserved up to an ion fluence of $10^{14}$ ions/cm$^2$, and beyond this significant degradation occurs in both. At the optimal implantation dose, an AC magnetic sensitivity of $\sim 1\,μ\mathrm{T}/\sqrt{\mathrm{Hz}}$ is achieved. Using the patterned implantation enabled by the FIB, we find that $V_{\mathrm{B}}^-$ centres and the associated lattice damage are well localised to the implanted regions. This work demonstrates how careful selection of fabrication parameters can be used to optimise the properties of $V_{\mathrm{B}}^-$ centres in hBN, supporting their application as quantum sensors based on 2D materials.

physics.app-ph↗

arXiv2025

Large-scale characterization of Single-Hole Transistors in 22-nm FDSOI CMOS Technology

State-of-the-art quantum processors have recently grown to reach 100s of physical qubits. As the number of qubits continues to grow, new challenges associated with scaling arise, such as device variability reduction and integration with cryogenic electronics for I/O management. Spin qubits in silicon quantum dots provide a platform where these problems may be mitigated, having demonstrated high control and readout fidelities and compatibility with large-scale manufacturing techniques of the semiconductor industry. Here, we demonstrate the monolithic integration of 384 p-type quantum dots, each embedded in a silicon transistor, with on-chip digital and analog electronics, all operating at deep cryogenic temperatures. The chip is fabricated using 22-nm fully-depleted silicon-on-insulator (FDSOI) CMOS technology. We extract key quantum dot parameters by fast readout and automated machine learning routines to determine the link between device dimensions and quantum dot yield, variability, and charge noise figures. Overall, our results demonstrate a path to monolithic integration of quantum and classical electronics at scale.

cond-mat.mes-hall↗

arXiv2025

High-fidelity dispersive spin sensing in a tuneable unit cell of silicon MOS quantum dots

Metal-oxide-semiconductor (MOS) technology is a promising platform for developing quantum computers based on spin qubits. Scaling this approach will benefit from compact and sensitive sensors that minimize constraints on qubit connectivity while being industrially manufacturable. Here, we demonstrate a compact dispersive spin-qubit sensor, a single-electron box (SEB), within a bilinear unit cell of planar MOS quantum dots (QDs) fabricated using an industrial grade 300 mm wafer process. By independent gate control of the SEB and double-quantum-dot tunnel rates, we optimize the sensor to achieve a readout fidelity of 99.92% in 340us (99% in 20us), fidelity values on a par with the best obtained with less compact sensors. Furthermore, we develop a Hidden Markov Model of the two-electron spin dynamics that enables a more accurate calculation of the measurement outcome and hence readout fidelity. Our results show how high-fidelity sensors can be introduced within silicon spin-qubit architectures while maintaining sufficient qubit connectivity as well as providing faster readout and more efficient initialisation schemes.

quant-ph↗

arXiv2025

An Integrated Deep-Cryogenic Temperature Sensor in CMOS Technology for Quantum Computing Applications

On-chip thermometry at deep-cryogenic temperatures is vital in quantum computing applications to accurately quantify the effect of increased temperature on qubit performance. In this work, we present a sub-1 K temperature sensor in CMOS technology based on the temperature dependence of the critical current of a superconducting (SC) thin-film. The sensor is implemented in 22-nm fully depleted silicon on insulator (FDSOI) technology and comprises a 6 nA resolution current-output digital-to-analog converter (DAC), a transimpedance amplifier (TIA) with a SC thin-film as a gain element, and a voltage comparator. The circuit dissipates 1.5 uW and is demonstrated operating at ambient temperatures as low as 15 mK, providing a variable temperature resolution reaching sub-10 mK.

quant-ph↗

arXiv2024

Automatic virtual voltage extraction of a 2x2 array of quantum dots with machine learning

Spin qubits in quantum dots are a compelling platform for fault-tolerant quantum computing due to the potential to fabricate dense two-dimensional arrays with nearest neighbour couplings, a requirement to implement the surface code. However, due to the proximity of the surface gate electrodes, cross-coupling capacitances can be substantial, making it difficult to control each quantum dot independently. Increasing the number of quantum dots increases the complexity of the calibration process, which becomes impractical to do heuristically. Inspired by recent demonstrations of industrial-grade silicon quantum dot bilinear arrays, we develop a theoretical framework to mitigate the effect of cross-capacitances in 2x2 arrays of quantum dots and extend it to 2xN and NxN arrays. The method is based on extracting the gradients in gate-voltage space of different charge transitions in multiple two-dimensional charge stability diagrams to determine the system's virtual gates. To automate the process, we train an ensemble of regression models to extract the gradients from a Hough transformation of charge stability diagrams and validate the algorithm on simulated and experimental data of a 2x2 quantum dot array. Our method provides a completely automated tool to mitigate cross-capacitance effects in arrays of QDs which could be utilised to study variability in device electrostatics across large arrays.

cond-mat.dis-nn↗

arXiv2024

A Multi-Module Silicon-On-Insulator Chip Assembly Containing Quantum Dots and Cryogenic Radio-Frequency Readout Electronics

Quantum processing units will be modules of larger information processing systems containing also digital and analog electronics modules. Silicon-based quantum computing offers the enticing opportunity to manufacture all the modules using the same technology platform. Here, we present a cryogenic multi-module assembly for multiplexed readout of silicon quantum devices where all modules have been fabricated using the same fully-depleted silicon-on-insulator (FDSOI) CMOS process. The assembly is constituted by three chiplets: (i) a low-noise amplifier (LNA), (ii) a single-pole eight-throw switch (SP8T), and (iii) a silicon quantum dot (QD) array. We integrate the chiplets into modules and show respectively, (i) a peak gain over 35dB with a 3dB bandwidth from 709MHz to 827MHz and an average noise temperature of 6.2K (minimum 4.2K), (ii) an insertion loss smaller than 1.1dB and a noise temperature less than 1.1K over the 0-2GHz range, and (iii) single-electron box (SEB) charge sensors. Finally, we combine all modules into a single demonstration showing time-domain radio-frequency multiplexing of two SEBs paving the way to an all-silicon quantum computing system.

quant-ph↗

arXiv2024

Donor-bound-exciton strain microscopy in silicon devices

We explore the effects of stress on silicon donor bound exciton ($\mathrm{D^0X}$) transitions in bulk silicon and in microfabricated silicon devices. We first study $\mathrm{D^0X}$ transitions in an isotopically purified silicon-28 bulk doped sample under controlled uniaxial stress, confirming the validity of existing models in the low strain ($\lesssim 10^{-5}$) regime. We then demonstrate the localised photoconductive detection of a few thousand donors illuminated by a 1078 nm resonant laser with $4~\mathrm{μm}$ spot focused on a microfabricated device consisting of an implanted phosphorus layer between a pair of metallic contacts. We observe local variations in the strained exciton peak splitting from $10~\mathrm{μeV}$ to $200~\mathrm{μeV}$, and obtain scanning microscopy stress maps in good agreement with finite-element-model thermal stress simulations. Our results suggest a potential use of donor bound excitons for in-situ stress sensing, and demonstrate pathways for the miniaturisation of $\mathrm{D^0X}$ photoconductive detection.

cond-mat.mes-hall↗

arXiv2023

Stability of near surface nitrogen vacancy centers using dielectric surface passivation

We study the photo-physical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and dropping by up to 25%, respectively). Characterization using Raman and X-ray photoelectron spectroscopies suggests a surface reconstruction: In air, atmospheric oxygen adsorption on surface leads to an increase in NV- fraction, whereas in vacuum, net oxygen desorption increases the NV0 fraction. NV charge state switching is confirmed by photoluminescence spectroscopy. Deposition of ~ 2 nm alumina (Al2O3) over the diamond surface was shown to stabilize the NV charge state under illumination in either environment, attributed to a more stable surface electronegativity. The use of alumina coating on diamond is therefore a promising approach to improve the resilience of NV sensors.

physics.app-ph↗

arXiv2023

Rapid cryogenic characterisation of 1024 integrated silicon quantum dots

Quantum computers are nearing the thousand qubit mark, with the current focus on scaling to improve computational performance. As quantum processors grow in complexity, new challenges arise such as the management of device variability and the interface with supporting electronics. Spin qubits in silicon quantum dots are poised to address these challenges with their proven control fidelities and potential for compatibility with large-scale integration. Here, we demonstrate the integration of 1024 silicon quantum dots with on-chip digital and analogue electronics, all operating below 1 K. A high-frequency analogue multiplexer provides fast access to all devices with minimal electrical connections, enabling characteristic data across the quantum dot array to be acquired in just 5 minutes. We achieve this by leveraging radio-frequency reflectometry with state-of-the-art signal integrity, reaching a minimum integration time of 160 ps. Key quantum dot parameters are extracted by fast automated machine learning routines to assess quantum dot yield and understand the impact of device design. We find correlations between quantum dot parameters and room temperature transistor behaviour that may be used as a proxy for in-line process monitoring. Our results show how rapid large-scale studies of silicon quantum devices can be performed at lower temperatures and measurement rates orders of magnitude faster than current probing techniques, and form a platform for the future on-chip addressing of large scale qubit arrays.

quant-ph↗

arXiv2023

Measurement of cryoelectronics heating using a local quantum dot thermometer in silicon

Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence the fidelity of qubit operations. Here, we utilize a quantum-dot-based thermometer embedded in an industry-standard silicon field-effect transistor (FET), to assess the local temperature increase produced by an active FET placed in close proximity. We study the impact of both static and dynamic operation regimes. When the FET is operated statically, we find a power budget of 45 nW at 100 nm separation whereas at 216 $μ$m the power budget raises to 150 $μ$W. When operated dynamically, we observe negligible temperature increase for the switch frequencies tested up to 10 MHz. Our work describes a method to accurately map out the available power budget at a distance from a solid-state quantum processor and indicate under which conditions cryoelectronics circuits may allow the operation of hybrid quantum-classical systems.

cond-mat.mes-hall↗