Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions

Junta Igarashi; Sébastien Geiskopf; Takanobu Shinoda; Butsurin Jinnai; Yann Le Guen; Julius Hohlfeld; Shunsuke Fukami; Hideo Ohno; Jon Gorchon; Stéphane Mangin; Michel Hehn; Grégory Malinowski

arXiv · 2510.25102

Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions

Junta Igarashi·Sébastien Geiskopf·Takanobu Shinoda·Butsurin Jinnai·Yann Le Guen·Julius Hohlfeld·Shunsuke Fukami·Hideo Ohno·Jon Gorchon·Stéphane Mangin·Michel Hehn·Grégory Malinowski

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Abstract

We demonstrate single-shot laser-pulse-induced magnetization reversal in rare-earth-free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin-transfer torque magnetic random-access memory (STT-MRAM). By tuning the Ru capping layer thickness, we modify the laser energy absorption profile and observe magnetization reversal from the parallel (P) to antiparallel (AP) state, with switching observed for $t_\text{Ru} \geq 2.0\,$ nm. Furthermore, we detect magnetization reversal in a micro-scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport, dipolar interactions, or a combination of both may contribute to the switching process, although the precise mechanism remains to be clarified. This work represents a significant step toward integrating ultrafast optical control with MTJ technology.

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Junta Igarashi, Sébastien Geiskopf, Takanobu Shinoda, Butsurin Jinnai, Yann Le Guen, Julius Hohlfeld, Shunsuke Fukami, Hideo Ohno, Jon Gorchon, Stéphane Mangin, Michel Hehn, Grégory Malinowski. 2025-10-29. Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions. https://arxiv.org/abs/2510.25102

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