arXiv subjects

Shunsuke Fukami

Publications and source records attributed to Shunsuke Fukami.

At least 19 recordsLinked to original sources

arXiv2026

Towards Ultra Scalability of Non-Volatile Magnetic Tunnel Junctions with a 3D Storage Layer

The perpendicular Spin Transfer Torque Magnetic Random Access Memory is one of the most promising emerging non-volatile memory technologies, based on ultra-thin magnetic tunnel junctions. However, as these devices are limited by their thermal stability factor at technological nodes smaller than 20 nm, their scalability is compromised. A possible solution to this limitation relies on taking advantage of the shape anisotropy, by increasing substantially the thickness of the storage layer. Thanks to the combination of a vertical aspect-ratio and enhanced volume, high thermal stability can be maintained at sub-10 nm nodes. Here, we present the technological advancements and understanding of the magnetisation reversal that led to faster switching speeds at reduced switching voltage, providing a viable approach for dense arrays of ultra-small magnetic tunnel junctions.

cond-mat.mes-hall↗

arXiv2026

Steady states and oscillation modes of two driven dissipative oscillators with non-Hermitian coupling

We analyze the dynamics of two harmonic oscillators with nonlinear, non-Hermitian coupling between them. Specifically, we consider a synthetic antiferromagnet composed of two ferromagnetic layers with antiferromagnetic interactions between the two layers, leading to the emergence of two oscillation modes of the combined system. We analyze the response of this system to external driving fields. We determine the allowed steady states under various driving conditions. We then analyze the dynamics of small deviations away from the different steady states, which reveals the normal modes that can be probed using spectroscopic techniques in experiment. As expected, the nonlinear system exhibits multistability, in which multiple steady states can exist for the same driving conditions. We find that the dynamical response can be drastically different depending on which one of the two modes is driven and on the strength of the driving. Specifically, we can obtain level-repulsion or level-attraction patterns in the spectrum. In addition to the rich variety of spectra, we find that some steady states exhibit normal modes that contain multiple frequencies. Our results explain recent experiments on synthetic antiferromagnets and provide guidance for designing experiments that can explore previously unseen phenomena in these systems.

cond-mat.other↗

arXiv2026

Multi-rotational switching in a noncollinear antiferromagnet by spin-orbit torque

Spintronics has advanced through discoveries of various electrically-driven spin dynamics in nanomagnets. Here, we report a novel switching dynamics of spin systems driven by spin-orbit torque, using a noncollinear antiferromagnetic nanodot. With electric pulses spanning a wide range of durations and amplitudes, we find an unconventional insensitivity of a threshold current density to pulse duration in switch-back events. This observation is attributed to a previously unrecognized process, in which the noncollinear antiferromagnetic order undergoes multiple rotations before completing reversal, a phenomenon we term multi-rotational switching. Our theoretical analysis reveals that multi-rotational switching arises from the interplay of three key factors: current-driven coherent rotation of the noncollinear antiferromagnetic order, field-induced reorientation of the uncompensated net magnetization, and thermal fluctuations. These findings establish a microscopic mechanism governing current-induced switching in noncollinear antiferromagnets, a topic of growing interest for next-generation spintronics technologies, opening a new route to controlling antiferromagnetic order in nanodevices.

cond-mat.mes-hall↗

arXiv2026

CMOS-integrated superparamagnetic tunnel junction-based p-bit

Probabilistic computers offer promising solutions for computationally hard problems in domains such as combinatorial optimization and machine learning. A key building block in these systems is the probabilistic bit (p-bit), which relies on superparamagnetic tunnel junctions (sMTJs) as its source of randomness. A challenging threshold to cross for scaling sMTJ-based p-bit systems is integration of sMTJs with CMOS technology. In this work, we present experimental results of a p-bit unit cell using sMTJs integrated with 130 nm CMOS technology and demonstrate that the sMTJ's resistance fluctuations can generate a corresponding fluctuating digital output voltage which is tunable via the input voltage. These findings establish the feasibility of CMOS-compatible, sMTJ-based probabilistic circuits and mark a key step toward scalable hardware for real-world probabilistic computing applications.

cs.ET↗

arXiv2026

Metrics for spin-based computing

Spin-based computing is emerging as a powerful approach for energy-efficient and high-performance solutions to future data processing hardware. Spintronic devices function by electrically manipulating the collective dynamics of the electron spin, that is inherently non-volatile, nonlinear and fast-operating, and can couple to other degrees of freedom such as photonic and phononic systems. This review explores key advances in integrating magnetic and spintronic elements into computational architectures, ranging from fundamental components like radio-frequency neurons/synapses and spintronic probabilistic-bits to broader frameworks such as reservoir computing and magnetic Ising machines. We discuss hardware-specific and task-dependent metrics to evaluate the computing performance of spin-based components and associate them with physical properties. Finally, we discuss challenges and future opportunities, highlighting the potential of spin-based computing in next-generation technologies.

cond-mat.mes-hall↗

arXiv2025

Single-shot laser-pulse-induced magnetization reversal in CoFeB/MgO-based magnetic tunnel junctions

We demonstrate single-shot laser-pulse-induced magnetization reversal in rare-earth-free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin-transfer torque magnetic random-access memory (STT-MRAM). By tuning the Ru capping layer thickness, we modify the laser energy absorption profile and observe magnetization reversal from the parallel (P) to antiparallel (AP) state, with switching observed for $t_\text{Ru} \geq 2.0\,$ nm. Furthermore, we detect magnetization reversal in a micro-scale MTJ device via the tunnel magnetoresistance (TMR) effect. Our findings suggest that ultrafast spin transport, dipolar interactions, or a combination of both may contribute to the switching process, although the precise mechanism remains to be clarified. This work represents a significant step toward integrating ultrafast optical control with MTJ technology.

cond-mat.mes-hall↗

arXiv2025

Challenges and opportunities in orbitronics

The spin of the electron has been a key enabler to realize spintronics devices that harness the spin degree of freedom beyond conventional charge-based electronics. In addition to spin, electrons have another degree of freedom associated with the angular momentum: orbital angular momentum. While spintronics has evolved fast and spintronics concepts are now used in magnetic sensors and nonvolatile memories, exploiting orbital angular momentum has just started to be studied. Phenomena mediated by orbital angular momentum have led to a new branch of spintronics called orbitronics. This Perspective discusses how orbitronics can constitute the next step in the evolution of spintronics by reviewing the current understandings and experimental results of orbital effects and summarizing the open questions. Prospects and challenges for devices in particular in non-volatile memory are discussed as an applications perspective.

cond-mat.mes-hall↗

arXiv2025

Navigating Chiral Spin Architectures in Non-Collinear Antiferromagnetic Thin Films

Noncollinear antiferromagnets offer much promise for antiferromagnetic spintronics and neuromorphic applications with a plethora of functional properties surpassing many competing magnetic systems. Films grown on mismatched substrates may relieve strain by the creation of slip-plane defects that strongly manipulate global physical properties important for application. This work demonstrates that a post growth annealing strategy results in near-defect-free, structurally robust films that reveal the underlying thermal evolution of the magnetic order symmetry. Beyond a critical film thickness, the spin structure transitions between two right-handed irreducible chiral representations via left-handed chiral ordering producing a striking change in the sign and angular dependence of the Anomalous Hall coefficient. The previously established mechanism of spin rotations in the (111) plane cannot fully explain the transition in applied magnetic field, and using a macrospin model this work finds that rotations along the chirality-inverting [1-10] direction are energetically preferable under certain conditions. These observations suggest that both left-handed and right-handed chiral order can be accessed in a single system, opening new routes to engineer devices by controlled switching of magnetic chirality allowing selection of associated functional properties as governed by symmetry.

cond-mat.mtrl-sci↗

arXiv2025

Size dependence of the properties of synthetic-antiferromagnet-based stochastic magnetic tunnel junctions for probabilistic computing

Stochastic magnetic tunnel junctions (s-MTJs) are core components for spintronics-based probabilistic computing (p-computing), a promising candidate for energy-efficient unconventional computing. To achieve reliable performance under practical conditions, the use of a synthetic antiferromagnetic (SAF) free-layer configuration was proposed due to its enhanced tolerance to magnetic field perturbations. For engineering the SAF s-MTJs, we systematically investigate the properties of the SAF s-MTJs as a function of the junction size. We observe that decreasing junction size leads to shorter relaxation times, enhanced magnetic field robustness, and enhanced insensitivity to bias voltage. These findings provide key insights toward high-performance p-computers with reliable operation.

physics.app-ph↗

arXiv2025

Dynamical control of random telegraph noise in magnetic tunnel junctions

Faster random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) would be beneficial for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce the RTN attempt frequency. We theoretically show that mode-selective heating and cooling by parametric excitation of Kittel mode or propagating spin waves can substantially increase or decrease the RTN frequency, respectively, and propose a nonlinear cooling mechanism that accelerates the switching dynamics. We outline experimental pathways to characterize the nonlinear processes that maximize the operation speed of MTJ-based probabilistic (p-) bits.

cond-mat.mes-hall↗

arXiv2025

Spintronic memristors for computing

The ever-increasing amount of data from ubiquitous smart devices fosters data-centric and cognitive algorithms. Traditional digital computer systems have separate logic and memory units, resulting in a huge delay and energy cost for implementing these algorithms. Memristors are programmable resistors with a memory, providing a paradigm-shifting approach towards creating intelligent hardware systems to handle data-centric tasks. Spintronic nanodevices are promising choices as they are high-speed, low-power, highly scalable, robust, and capable of constructing dynamic complex systems. In this Review, we survey spintronic devices from a memristor point of view. We introduce spintronic memristors based on magnetic tunnel junctions, nanomagnet ensemble, domain walls, topological spin textures, and spin waves, which represent dramatically different state spaces. They can exhibit steady, oscillatory, stochastic, and chaotic trajectories in their state spaces, which have been exploited for in-memory logic, neuromorphic computing, stochastic and chaos computing. Finally, we discuss challenges and trends in realizing large-scale spintronic memristive systems for practical applications.

physics.app-ph↗

arXiv2025

Interfacial Dzyaloshinskii-Moriya interaction in nonmagnetic/noncollinear-antiferromagnetic bilayers

We study Dzyaloshinskii-Moriya interaction (DMI) appearing at the interface of a nonmagnetic/noncollinear-antiferromagnetic bilayer. DMI is an antisymmetric exchange interaction between neighboring magnetic spins, arising in the absence of inversion center between the spins and the explicit expression of which being dictated by system symmetry. We formulate the interfacial DMI for different crystalline orientations of the noncollinear antiferromagnet with stacked-Kagome lattice structure. From this formulation, we show that, when the Kagome planes are perpendicular to the sample film plane, the DMI serves as a uniaxial magnetic anisotropy for the antiferromagnetic order parameter. Our findings reveal a novel physical manifestation of a DMI, shedding a new light on microscopic mechanisms of the magnetic anisotropy in noncollinear antiferromagnets.

cond-mat.mes-hall↗

arXiv2025

Unraveling effects of competing interactions and frustration in vdW ferromagnetic Fe3GeTe2 nanoflake devices

Two-dimensional (2D) van der Waals (vdW) magnets and devices have garnered significant attention owing to the stabilization of long range magnetic order down to atomic limit, and the prospect for novel quantum devices with unique functionalities. To achieve this objective, clarification of magnetotransport properties and understanding of the relevant interactions with lowering of dimensions are of extreme importance. Here, the magnetotransport properties of few atomic layer Fe3GeTe2 and (Co0.25Fe0.75)3GeTe2 nanoflake devices have been investigated. Magnetotransport investigations with applied magnetic field along the easy-axis shows anomalous Hall effect, while that for applied magnetic field along the hard-axis reveals an unusual behaviour. Atomistic calculations considering the presence of antiferromagnetic, ferromagnetic and local symmetry-breaking interactions reveal critical role of magnetic frustration effect assisted by thermal fluctuations, leading to a non-zero scalar spin chirality manifesting in an unconventional Hall effect. The present result clarifies the underlying interactions in few-layer 2D vdW ferromagnetic material system, important for the understanding of non-collinear spin configurations in vdW magnets for 2D spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Electrically Tunable Picosecond-scale Octupole Fluctuations in Chiral Antiferromagnets

We present a theory for the relaxation time of the octupole order parameter in nanoscale chiral antiferromagnets (AFMs) coupled to thermal baths and spin injection sources. Using stochastic spin dynamics simulations, we demonstrate that the octupole moment relaxes through two distinct mechanisms$-$escape over a barrier and precessional dephasing$-$as the barrier for octupole fluctuations is lowered relative to the thermal energy. Notably, the octupole moment relaxes orders of magnitude faster than the typical dipolar order parameters, reaching picosecond timescales. By combining Langer's theory with an effective low-energy description of octupole dynamics in chiral AFMs, we derive analytical expressions for the relaxation times. We find that relaxation in chiral AFMs parallels dipole relaxation in XY magnets, with exchange fields serving the role of the dipole fields. Further, by drawing on the analogy between order parameter dynamics in XY magnets under spin injection and current-biased Josephson junctions, we propose a new scheme for electrically tuning the octupole relaxation times. Our work offers fundamental insights for the development of next-generation spintronic devices that harness octupole order parameters for information encoding, especially in octupole-based probabilistic computing.

cond-mat.mes-hall↗

arXiv2024

Impact of external magnetic fields on STT-MRAM

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of magnetic fields are given. Based on the magnitude of commonly encountered external magnetic fields, we show below that magnetic immunity of STT-MRAM is sufficient for most uses once the chip is mounted on a printed circuit board (PCB) or inserted in its working environment. This statement is supported by the experience acquired during 60 years of use of magnetic hard disk drives (HDD) including 20 years of HDD with readers comprising magnetic tunnel junctions, 20+ years of use of magnetic field sensors as position encoders in automotive industry and 15+ years of use of MRAM. Mainly during chip handling does caution need to be exercised to avoid exposing the chip to excessively high magnetic fields.

physics.app-ph↗

arXiv2024

Nanoscale spin rectifiers for harvesting ambient radiofrequency energy

Radiofrequency harvesting using ambient wireless energy could be used to reduce the carbon footprint of electronic devices. However, ambient radiofrequency energy is weak (less than -20 dBm), and thermodynamic limits and high-frequency parasitic impedance restrict the performance of state-of-the-art radiofrequency rectifiers. Nanoscale spin rectifiers based on magnetic tunnel junctions have recently demonstrated high sensitivity, but suffer from a low a.c.-to-d.c. conversion efficiency (less than 1%). Here, we report a sensitive spin rectifier rectenna that can harvest ambient radiofrequency signals between -62 and -20 dBm. We also develop an on-chip co-planar waveguide-based spin rectifier array with a large zero-bias sensitivity (around 34,500 mV/mW) and high efficiency (7.81%). Self-parametric excitation driven by voltage-controlled magnetic anisotropy is a key mechanism that contributes to the performance of the spin-rectifier array. We show that these spin rectifiers can wirelessly power a sensor at a radiofrequency power of -27 dBm.

cond-mat.mtrl-sci↗

arXiv2024

Effect of nonlinear magnon interactions on the stochastic magnetization switching

Telegraph noise caused by frequent switching of the magnetization in small magnetic devices has become a useful resource for probabilistic computing. Conventional theories have been based on a linearization of the fluctuations at the extrema of the magnetic free energy. We show theoretically that the non-linearities, specifically four-magnon scatterings, reduce the equilibrium fluctuation amplitude of the magnetization as well as the switching frequencies between local minima via the decay of the homogeneous Kittel mode into two spin waves with opposite momenta. Selectively suppressing the effective temperature of the finite-k spin waves, or reducing the radius of a thin magnetic disk enhance the switching frequency and improve performance of magnetic tunnel junctions in probabilistic computing applications.

cond-mat.mes-hall↗

arXiv2024

Voltage-insensitive stochastic magnetic tunnel junctions with double free layers

Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to voltage across the junction over several hundred millivolts. In conventional s-MTJs with a reference layer having a fixed magnetization direction, however, the stochastic output significantly varies with the voltage due to spin-transfer torque (STT) acting on the stochastic free layer. In this work, we study a s-MTJ with a "double-free-layer" design theoretically proposed earlier, in which the fixed reference layer of the conventional structure is replaced by another stochastic free layer, effectively mitigating the influence of STT on the stochastic output. We show that the key device property characterized by the ratio of relaxation times between the high- and low-resistance states is one to two orders of magnitude less sensitive to bias voltage variations compared to conventional s-MTJs when the top and bottom free layers are designed to possess the same effective thickness. This work opens a pathway for reliable, nanosecond-operation, high-output, and scalable spintronics-based p-bits.

cond-mat.mes-hall↗