arXiv · 2511.05388
Spin-Based True Random Number Generation Enabled by Voltage-Amplified Quantum Fluctuations
Abstract
We investigate spin quantum-fluctuation effects that originate from the Heisenberg uncertainty principle during the dynamical cycle of disentanglement, entanglement, and re-disentanglement between itinerant electrons and localized magnetic moments mediated by the s-d exchange interaction. Beyond conventional deterministic spin-transfer torque, we analyze an intrinsic mechanism that transfers spin quantum fluctuations to a nanomagnet. By extending the Landau-Lifshitz-Gilbert equation to incorporate both quantum and thermal stochastic fields, we identify a temperature regime in which quantum fluctuations dominate the magnetization dynamics. We further show that voltage-controlled magnetic anisotropy exponentially amplifies spin quantum fluctuations, enabling binary readout through magnetoresistance in magnetic tunnel junctions. These findings provide a microscopic framework for fluctuation-driven spin dynamics and outline a device-level pathway toward spin-based quantum true random number generation.
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Jie Zheng, Jiyong Kang, Zheng Zhu, Di Wu, Yuesheng Li, Dongxing Yu, Jiayong Wang, Hongxing Xu, Chenglong Jia. 2025-11-07. Spin-Based True Random Number Generation Enabled by Voltage-Amplified Quantum Fluctuations. https://arxiv.org/abs/2511.05388
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