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arXiv · 2601.03942

Conveyor-mode electron shuttling through a T-junction in Si/SiGe

Max Beer·Ran Xue·Lennart Deda·Stefan Trellenkamp·Jhih-Sian Tu·Paul Surrey·Inga Seidler·Hendrik Bluhm·Lars R. Schreiber
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Abstract

Conveyor-mode shuttling in gated Si/SiGe devices enables adiabatic transfer of single electrons, electron patterns and spin qubits confined in quantum dots across several microns with a scalable number of signal lines. To realize their full potential, linear shuttle lanes must connect into a two-dimensional grid with controllable routing. We introduce a T-junction device linking two independently driven shuttle lanes. Electron routing across the junction requires no extra control lines beyond the four channels per conveyor belt. We measure an inter-lane charge transfer fidelity of $F = 100.0000000^{+0}_{-9\times 10^{-7}}\,\%$ at an instantaneous electron velocity of $270\,\mathrm{mm}\,\mathrm{s}^{-1}$. The filling of 54 quantum dots is controlled by simple atomic pulses, allowing us to swap electron patterns, laying the groundwork for a native spin-qubit SWAP gate. This T-junction establishes a path towards scalable, two-dimensional quantum computing architectures with flexible spin qubit routing for quantum error correction.

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Max Beer, Ran Xue, Lennart Deda, Stefan Trellenkamp, Jhih-Sian Tu, Paul Surrey, Inga Seidler, Hendrik Bluhm, Lars R. Schreiber. 2026-01-07. Conveyor-mode electron shuttling through a T-junction in Si/SiGe. https://arxiv.org/abs/2601.03942

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