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arXiv · 2608.22482

Impact of Environmental Stress on Low Gain Avalanche Diode Sensors Response

Mohamed Hijas Mohamed Farook·Gaetano Barone·Diallo Boye·Gabriele D'Amen·Gabriele Giacomini·Timo Peltola·Jennifer Roloff·Enrico Rossi·Trevor Russell·Sally Seidel·Alessandro Tricoli·Lixing Wang
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Abstract

Low Gain Avalanche Diodes or LGADs are silicon sensors capable of achieving excellent timing resolution due to their characteristic internal gain. Detectors based on LGAD technology play a crucial role in High Energy and Nuclear Physics experiments, among other applications. However, their performance is affected by environmental factors such as temperature, humidity, and storage conditions. A systematic evaluation of the response of LGAD sensors as a function of these environmental parameters is therefore of essential importance for any application. LGAD sensors fabricated at the Brookhaven National Laboratory are characterized and stress-tested against various operating conditions, such as rapid temperature and humidity changes. Dedicated and detailed simulations are used to interpret the experimental results.

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Mohamed Hijas Mohamed Farook, Gaetano Barone, Diallo Boye, Gabriele D'Amen, Gabriele Giacomini, Timo Peltola, Jennifer Roloff, Enrico Rossi, Trevor Russell, Sally Seidel, Alessandro Tricoli, Lixing Wang. 2026-08-23. Impact of Environmental Stress on Low Gain Avalanche Diode Sensors Response. https://arxiv.org/abs/2608.22482

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