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Spin-splitting in GaAs 2D holes

S. J. Papadakis·E. P. De Poortere·M. Shayegan·R. Winkler
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Abstract

We present quantitative measurements and calculations of the spin-orbit induced zero-magnetic-field spin-splitting in two-dimensional (2D) hole systems in modulation-doped GaAs (311)A quantum wells. The results show that the splitting is large and tunable. In particular, via a combination of back- and front-gate biases, we can tune the splitting while keeping the 2D hole density constant. The data also reveal a surprising result regarding the magnetoresistance (Shubnikov-de Haas) oscillations in a 2D system with spin-split energy bands: the frequencies of the oscillations are {\it not} simply related to the population of the spin-subbands. Next we concentrate on the metallic-like behavior observed in these 2D holes and its relation to spin-splitting. The data indicate that the metallic behavior is more pronounced when two spin-subbands with unequal populations are occupied. Our measurements of the magnetoresistance of these 2D hole systems with an in-plane magnetic field corroborate this conclusion: while the system is metallic at zero magnetic field, it turns insulating when one of the spin-subbands is depopulated at high magnetic field.

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S. J. Papadakis, E. P. De Poortere, M. Shayegan, R. Winkler. 2000-06-30. Spin-splitting in GaAs 2D holes. https://doi.org/10.1016/s1386-9477(00)00174-0

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