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Bandgap recovery and electron doping on cleaved [100] surfaces of divalent semi-metal hexaborides

J. D. Denlinger·J. A. Clack·J. W. Allen·G. -H. Gweon·D. M. Poirier·C. G. Olson·J. L. Sarrao·Z. Fisk
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Abstract

This paper has been withdrawn by the authors due to new theoretical evidence and experimental proof that the semiconducting bandgap reported in this paper and ascribed to a surface region is in fact a bulk property of divalent hexaborides. As reported in J. D. Denlinger et al., cond-mat/0107429, which supercedes this paper, bulk-sensitive boron K-edge soft x-ray emission provides a complementary confirmation of the X-point band gap identified by angle-resolved photoemission.

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J. D. Denlinger, J. A. Clack, J. W. Allen, G. -H. Gweon, D. M. Poirier, C. G. Olson, J. L. Sarrao, Z. Fisk. 2002-06-07. Bandgap recovery and electron doping on cleaved [100] surfaces of divalent semi-metal hexaborides. https://arxiv.org/abs/cond-mat/0009022

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