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Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

V. F. Motsnyi·V. I. Safarov·J. De Boeck·J. Das·W. Van Roy·E. Goovaerts·G. Borghs
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Abstract

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.

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V. F. Motsnyi, V. I. Safarov, J. De Boeck, J. Das, W. Van Roy, E. Goovaerts, G. Borghs. 2001-10-11. Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure. https://doi.org/10.1063/1.1491010

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