SearcharxivSearch

arXiv subjects

J. De Boeck

Publications and source records attributed to J. De Boeck.

14 recordsLinked to original sources

Argon milling induced decoherence mechanisms in superconducting quantum circuits

The fabrication of superconducting circuits requires multiple deposition, etch and cleaning steps, each possibly introducing material property changes and microscopic defects. In this work, we specifically investigate the process of argon milling, a potentially coherence limiting step, using niobium and aluminum superconducting resonators as a proxy for surface-limited behavior of qubits. We find that niobium microwave resonators exhibit an order of magnitude decrease in quality-factors after surface argon milling, while aluminum resonators are resilient to the same process. Extensive analysis of the niobium surface shows no change in the suboxide composition due to argon milling, while two-tone spectroscopy measurements reveal an increase in two-level system electrical dipole moments, indicating a structurally altered niobium oxide hosting larger two-level system defects. However, a short dry etch can fully recover the argon milling induced losses on niobium, offering a potential route towards state-of-the-art overlap Josephson junction qubits with niobium circuitry.

quant-ph

Seed Layer Impact on Structural and Magnetic Properties of [Co/Ni] Multilayers with Perpendicular Magnetic Anisotropy

[Co/Ni] multilayers with perpendicular magnetic anisotropy (PMA) have been researched and applied in various spintronic applications. Typically the seed layer material is studied to provide the desired face-centered cubic (\textit{fcc}) texture to the [Co/Ni] to obtain PMA. The integration of [Co/Ni] in back-end-of-line (BEOL) processes also requires the PMA to survive post-annealing. In this paper, the impact of NiCr, Pt, Ru, and Ta seed layers on the structural and magnetic properties of [Co(0.3 nm)/Ni(0.6 nm)] multilayers is investigated before and after annealing. The multilayers were deposited \textit{in-situ} on different seeds via physical vapor deposition at room temperature. The as-deposited [Co/Ni] films show the required \textit{fcc}(111) texture on all seeds, but PMA is only observed on Pt and Ru. In-plane magnetic anisotropy (IMA) is obtained on NiCr and Ta seeds, which is attributed to strain-induced PMA loss. PMA is maintained on all seeds after post-annealing up to 400$^{\circ}$C. The largest effective perpendicular anisotropy energy ($K_U^{\mathrm{eff}}\approx 2\times10^5$J/m$^3$) after annealing is achieved on NiCr seed. The evolution of PMA upon annealing cannot be explained by further crystallization during annealing or strain-induced PMA, nor can the observed magnetization loss and the increased damping after annealing. Here we identify the diffusion of the non-magnetic materials from the seed into [Co/Ni] as the major driver of the changes in the magnetic properties. By selecting the seed and post-annealing temperature, the [Co/Ni] can be tuned in a broad range for both PMA and damping.

cond-mat.mtrl-sci

Ferromagnetic resonance study of composite Co/Ni - FeCoB free layers with perpendicular anisotropy

We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W, Mo) to a very anisotropic [Co/Ni] multilayer embodied in a magnetic tunnel junction meant for spin torque memory applications. For this we use broadband ferromagnetic resonance to follow the field dependence of the acoustical and optical excitation of the composite free layer in both in-plane and out-of-plane applied fields. The modeling provides the interlayer exchange coupling, the anisotropies and the damping factors. The popular Ta spacer are outperformed by W and even more by Mo, which combines the strongest interlayer exchange coupling without sacrificing anisotropies, damping factors and transport properties.

cond-mat.mtrl-sci

Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states

We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we find that above a geometry-dependent magnetic field value the sample in the superconducting state has a higher longitudinal resistance than in the normal state. Both observations can be explained with edge channels populated with electrons and Andreev reflected holes.

cond-mat.mes-hall

Spatial structure of Mn-Mn acceptor pairs in GaAs

The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $δ$-doped layers grown on differently oriented substrates.

cond-mat.mtrl-sci

Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode

The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of the current spin polarization.

cond-mat.mtrl-sci

Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy

An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.

cond-mat.mtrl-sci

Spatial structure of an individual Mn acceptor in GaAs

The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the cross-like shape for the hole wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.

cond-mat.mtrl-sci

Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy

We present results on the direct spatial mapping of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope (X-STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feature. We attribute this feature to a hole weakly bound to the Mn ion forming the [Mn2+(3d5) + hole] complex.

cond-mat.mtrl-sci

Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.

cond-mat.mtrl-sci

Spatially resolved ultrafast precessional magnetization reversal

Spatially resolved measurements of quasi-ballistic precessional magnetic switching in a microstructure are presented. Crossing current wires allow detailed study of the precessional switching induced by coincident longitudinal and transverse magnetic field pulses. Though the response is initially spatially uniform, dephasing occurs leading to nonuniformity and transient demagnetization. This nonuniformity comes in spite of a novel method for suppression of end domains in remanence. The results have implications for the reliability of ballistic precessional switching in magnetic devices.

cond-mat.mtrl-sci

Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.

cond-mat.mtrl-sci

Commensurability effects in Andreev antidot billiards

An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe a strong reduction of the resistance around B=0 and a suppression of the commensurability peaks, which are usually found in antidot lattices. Both effects can be explained in a classical Kubo approach by considering the trajectories of charge carriers in the semiconductor, when Andreev reflection at the semiconductor-superconductor interface is included. For perfect Andreev reflection, we expect a complete suppression of the commensurability features, even though motion at finite B is chaotic.

cond-mat.mes-hall

Skipping orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices

We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo formula and an analysis of the Poincare surface of section at different magnetic field values. At low temperatures we observe weak 1/B-periodic oscillations superimposed on the classical maximum.

cond-mat.mes-hall