arXiv subjects

W. Van Roy

Publications and source records attributed to W. Van Roy.

12 recordsLinked to original sources

arXiv2011

Frequency shift keying in vortex-based spin torque oscillators

Vortex-based spin-torque oscillators can be made from extended spin valves connected to an electrical nanocontact. We study the implementation of frequency shift keying modulation in these oscillators. Upon a square modulation of the current in the 10 MHz range, the vortex frequency follows the current command, with easy identification of the two swapping frequencies in the spectral measurements. The frequency distribution of the output power can be accounted for by convolution transformations of the dc current vortex waveform, and the current modulation. Modeling indicates that the frequency transitions are phase coherent and last less than 25 ns. Complementing the multi-octave tunability and first-class agility, the capability of frequency shift keying modulation is an additional milestone for the implementation of vortex-based oscillators in RF circuit.

cond-mat.mtrl-sci↗

arXiv2009

Agility of vortex-based nanocontact spin torque oscillators

We study the agility of current-tunable oscillators based on a magnetic vortex orbiting around a point contact in spin-valves. Theory predicts frequency-tuning by currents occurs at constant orbital radius, so an exceptional agility is anticipated. To test this, we have inserted an oscillator in a microwave interferometer to apply abrupt current variations while time resolving its emission. Using frequency shift keying, we show that the oscillator can switch between two stabilized frequencies differing by 25% in less than ten periods. With a wide frequency tunability and a good agility, such oscillators possess desirable figures of merit for modulation-based rf applications.

cond-mat.mes-hall↗

arXiv2008

An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material

This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.

cond-mat.mes-hall↗

arXiv2005

Spatial structure of Mn-Mn acceptor pairs in GaAs

The local density of states of Mn-Mn pairs in GaAs is mapped with cross-sectional scanning tunneling microscopy and compared with theoretical calculations based on envelope-function and tight-binding models. These measurements and calculations show that the crosslike shape of the Mn-acceptor wavefunction in GaAs persists even at very short Mn-Mn spatial separations. The resilience of the Mn-acceptor wave-function to high doping levels suggests that ferromagnetism in GaMnAs is strongly influenced by impurity-band formation. The envelope-function and tight-binding models predict similarly anisotropic overlaps of the Mn wave-functions for Mn-Mn pairs. This anisotropy implies differing Curie temperatures for Mn $δ$-doped layers grown on differently oriented substrates.

cond-mat.mtrl-sci↗

arXiv2005

Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As

A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can be simultaneously mapped over a wide range of temperatures. These results, when compared with theoretical predictions, appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

cond-mat.soft↗

arXiv2005

Voltage controlled spin injection in a (Ga,Mn)As/(Al,Ga)As Zener diode

The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, the band bending, and the current-voltage characteristics for the entire structure. An empirical tight-binding model, together with the Landauer- Buttiker theory of coherent transport has been developed to study the current spin polarization. This dual approach allows to explain the experimentally observed high magnitude and strong bias dependence of the current spin polarization.

cond-mat.mtrl-sci↗

arXiv2004

Enhanced annealing effect in an oxygen atmosphere on GaMnAs

We report on in-situ resistivity measurements on GaMnAs during post-growth annealing in different atmospheres. A drop in the resistivity is observed when the GaMnAs is exposed to oxygen, which indicates that the passivation of Mn interstitials (Mn_I) at the free surface occurs through oxidation. The presence of oxygen can therefore be an important annealing condition for the optimization of GaMnAs thin films, all the more since the oxidation appears to be limited to the sample surface. Annealing in an oxygen-free atmosphere leads to an increase in the resistivity indicating a second annealing mechanism besides the out-diffusion of Mn_I. According to our magnetization and Hall effect data, this mechanism reduces the amount of magnetically and electrically active Mn atoms.

cond-mat.str-el↗

arXiv2004

Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy

An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.

cond-mat.mtrl-sci↗

arXiv2004

Spatial structure of an individual Mn acceptor in GaAs

The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape is observed. The spatial structure is compared with that from an envelope-function, effective mass model, and from a tight-binding model. This demonstrates that anisotropy arising from the cubic symmetry of the GaAs crystal produces the cross-like shape for the hole wave-function. Thus the coupling between Mn dopants in GaMnAs mediated by such holes will be highly anisotropic.

cond-mat.mtrl-sci↗

arXiv2003

Imaging of the [Mn2+(3d5) + hole] complex in GaAs by Cross-sectional Scanning Tunneling Microscopy

We present results on the direct spatial mapping of the wave-function of a hole bound to a Mn acceptor in GaAs. To investigate individual Mn dopants at the atomic scale in both ionized and neutral configurations, we used a room temperature cross-sectional scanning tunneling microscope (X-STM). We found that in the neutral configuration manganese manifests itself as an anisotropic cross-like feature. We attribute this feature to a hole weakly bound to the Mn ion forming the [Mn2+(3d5) + hole] complex.

cond-mat.mtrl-sci↗

arXiv2003

Highly efficient room temperature spin injection in a metal-insulator-semiconductor light emitting diode

We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature.

cond-mat.mtrl-sci↗

arXiv2001

Electrical Spin Injection in a Ferromagnetic / Tunnel Barrier/ Semiconductor Heterostructure

We demonstrate experimentally the electrical ballistic electron spin injection from a ferromagnetic metal / tunnel barrier contact into a semiconductor III-V heterostructure. We introduce the Oblique Hanle Effect technique for reliable optical measurement of the degree of injected spin polarization. In a CoFe / Al2O3 / GaAs / (Al,Ga)As heterostructure we observed injected spin polarization in excess of 8 % at 80K.

cond-mat.mtrl-sci↗