Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

I. Hoxha; S. A. Vitkalov; N. A. Zimbovskaya; M. P. Sarachik; T. M. Klapwijk

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Microwave Rectification at the Boundary between Two-Dimensional Electron Systems

I. Hoxha·S. A. Vitkalov·N. A. Zimbovskaya·M. P. Sarachik·T. M. Klapwijk

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Abstract

Rectification of microwave radiation (20-40 GHz) by a line boundary between two two-dimensional metals on a silicon surface was observed and investigated at different temperatures, in-plane magnetic fields and microwave powers. The rectified voltage $V_{dc}$ is generated whenever the electron densities $n_{1,2}$ of the two metals are different, changing polarity at $n_1 \approx n_2$. Very strong nonlinear response is found when one of the two 2D metals is close to the electron density corresponding to the reported magnetic instability in this system.

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I. Hoxha, S. A. Vitkalov, N. A. Zimbovskaya, M. P. Sarachik, T. M. Klapwijk. 2001-10-17. Microwave Rectification at the Boundary between Two-Dimensional Electron Systems. https://arxiv.org/abs/cond-mat/0110331

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