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Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems

N. S. Averkiev·L. E. Golub·M. Willander
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Abstract

Spin relaxation is investigated theoretically in two-dimensional systems. Various semiconductor structures of both n- and p-types are studied in detail. The most important spin relaxation mechanisms are considered. The spin relaxation times are calculated taking into account the contributions to the spin--orbit interaction due to both the bulk inversion asymmetry and the structure inversion asymmetry. It is shown that in-plane anisotropy of electron spin relaxation appears in III--V asymmetrical heterostructures. This anisotropy may be controlled by external parameters, and the spin relaxation times differ by several orders of magnitude.

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N. S. Averkiev, L. E. Golub, M. Willander. 2002-02-25. Spin Relaxation Anisotropy in Two-Dimensional Semiconductor Systems. https://doi.org/10.1088/0953-8984%2F14%2F12%2F202

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