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Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields

E. Tutuc·S. Melinte·E. P. De Poortere·M. Shayegan·R. Winkler
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Abstract

We report measurements and calculations of the spin-polarization, induced by a parallel magnetic field, of interacting, dilute, two-dimensional electron systems confined to GaAs/AlGaAs heterostructures. The results reveal the crucial role the non-zero electron layer thickness plays: it causes a deformation of the energy surface in the presence of a parallel field, leading to enhanced values for the effective mass and g-factor and a non-linear spin-polarization with field.

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E. Tutuc, S. Melinte, E. P. De Poortere, M. Shayegan, R. Winkler. 2003-01-27. Role of finite layer thickness in spin-polarization of GaAs 2D electrons in strong parallel magnetic fields. https://doi.org/10.1103/physrevb.67.241309

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