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Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices

R. G. Mani·J. H. Smet·K. von Klitzing·V. Narayanamurti·W. B. Johnson·V. Umansky
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Abstract

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron is evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.

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R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, V. Umansky. 2004-05-24. Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices. https://doi.org/10.1103/physrevb.69.193304

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