arXiv subjects

J. H. Smet

Publications and source records attributed to J. H. Smet.

At least 19 recordsLinked to original sources

arXiv2018

A cascade of phase transitions in an orbitally mixed half-filled Landau level

Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. Here we explore the ground states at filling factor $ν$ = 5/2 in ZnO-based two-dimensional electron systems through a forced intersection of opposing spin branches of Landau levels taking quantum numbers $N$ = 1 and 0. We reveal a cascade of phases with distinct magnetotransport features including a gapped phase polarized in the $N$ = 1 level and a compressible phase in N = 0, along with an unexpected Fermi-liquid, a second gapped, and a strongly anisotropic nematic-like phase at intermediate polarizations when the levels are near degeneracy. The phase diagram is produced by analyzing the proximity of the intersecting levels and highlights the excellent reproducibility and controllability ZnO offers for exploring exotic fractionalized electronic phases.

cond-mat.mes-hall↗

arXiv2017

Characterization of individual layers in a bilayer electron system produced in a wide quantum well

Here we report on a transparent method to characterize individual layers in a double-layer electron system which forms in a wide quantum well and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of the second subband and appearance of an additional electron layer can be detected. The magnetic field dependence of these capacitances is dominated by quantum corrections caused by the occupation of Landau levels in the nearest electron layer. The technique should be equally applicable to other implementations of a double layer electron system.

cond-mat.mes-hall↗

arXiv2017

Ultrafast lithium diffusion in bilayer graphene

Solid mixed conductors with significant ionic as well as electronic conduction play a pivotal role for mass transfer and storage as required in battery electrodes. Single-phase materials with simultaneously high electronic and ionic conductivity at room temperature are hard to come by and therefore multi-phase systems with separate ion and electron channels have been put forward instead. Here, we explore bilayer graphene as a true single phase mixed conductor and demonstrate ultrafast lithium diffusion exceeding diffusion in bulk graphite by an order of magnitude and even surpassing diffusion of sodium chloride in liquid water. To this end, an innovative electrochemical cell architecture has been developed where the redox-reaction forcing lithium intercalation is localized at a protrusion of the device only. Its remainder consists of pristine bilayer graphene unperturbed by an electrolyte. The geometry lends itself to the use of magnetotransport machinery known from mesoscopic low-dimensional physics. Time dependent Hall measurements across spatially displaced Hall probes deliver a direct view on the in-plane diffusion kinetics. The device layout with a perimeterial electrochemical cell is transferable to other 2D materials as well as thin films and may promote a paradigm shift on the use of electrolytes in on-chip experiments.

cond-mat.mes-hall↗

arXiv2016

Microwave-Induced Oscillations in the Magnetocapacitance: Direct Evidence for Non-equilibrium Occupation of Electronic States

In a two-dimensional electron system, microwave radiation may induce giant resistance oscillations. Their origin has been debated controversially and numerous mechanisms based on very different physical phenomena have been invoked. However none of them have been unambiguously experimentally identified, since they produce similar effects in transport studies. The capacitance of a two-subband system is sensitive to a redistribution of electrons over energy states, since it entails a shift of the electron charge perpendicular to the plane. In such a system microwave induced magnetocapacitance oscillations have been observed. They can only be accounted for by an electron distribution function oscillating with energy due to Landau quantization, one of the quantum mechanisms proposed for the resistance oscillations.

cond-mat.mes-hall↗

arXiv2012

Current Induced Nuclear Spin Depolarization at Landau Level Filling Factor nu=1/2

Hyperfine interactions between electron and nuclear spins in the quantum Hall regime provide powerful means for manipulation and detection of nuclear spins. In this work we demonstrate that significant changes in nuclear spin polarization can be created by applying an electric current in a 2-dimensional electron system at Landau level filling factor nu=1/2. Electron spin transitions at nu= 2/3 and 1/2 are utilized for the measurement of the nuclear spin polarization. Consistent results are obtained from these two different methods of nuclear magnetometry. The finite thickness of the electron wavefunction is found to be important even for a narrow quantum well. The current induced effect on nuclear spins can be attributed to electron heating and the efficient coupling between the nuclear and electron spin systems at nu=1/2. The electron temperature, elevated by the current, can be measured with a thermometer based on the measurement of the nuclear spin relaxation rate. The nuclear spin polarization follows a Curie law dependence on the electron temperature. This work also allows us to evaluate the electron g-factor in high magnetic fields as well as the polarization mass of composite fermions.

cond-mat.mes-hall↗

arXiv2012

How branching can change the conductance of ballistic semiconductor devices

We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case even when the system size is much smaller than the mean free path. In a corner-shaped ballistic device based on a GaAs/AlGaAs two-dimensional electron gas we observe a splitting of the commensurability peaks in the magnetoresistance curve. We show that a model which includes a random disorder potential of the two-dimensional electron gas can account for the random splitting of the peaks that result from the collimation of the electron beam. The shape of the splitting depends on the particular realization of the disorder potential. At the same time magnetic focusing peaks are largely unaffected by the disorder potential.

cond-mat.mes-hall↗

arXiv2011

Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport

We demonstrate that the weak antilocalization effect can serve as a convenient method for detecting decoupled surface transport in topological insulator thin films. In the regime where a bulk Fermi surface coexists with the surface states, the low field magnetoconductivity is described well by the Hikami-Larkin-Nagaoka equation for single component transport of non-interacting electrons. When the electron density is lowered, the magnetotransport behavior deviates from the single component description and strong evidence is found for independent conducting channels at the bottom and top surfaces. The magnetic-field-dependent part of corrections to conductivity due to the Zeeman energy is shown to be negligible despite non-negligible electron-electron interactions.

cond-mat.mes-hall↗

arXiv2009

The nature of localization in graphene under quantum Hall conditions

Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to compete with disorder and to play a central role in particle localization [3]. Here we address the nature of localization in graphene where the carrier mobility, quantifying the disorder, is two to four orders of magnitude smaller [4,5,6,7,8,9,10]. We image the electronic density of states and the localized state spectrum of a graphene flake in the quantum Hall regime with a scanning single electron transistor [11]. Our microscopic approach provides direct insight into the nature of localization. Surprisingly, despite strong disorder, our findings indicate that localization in graphene is not dominated by single particle physics, but rather by a competition between the underlying disorder potential and the repulsive Coulomb interaction responsible for screening.

cond-mat.mes-hall↗

arXiv2008

Photo-current and photo-voltage oscillations in the two-dimensional electron system: screening and "anti-screening" of a potential profile

We observe in state-of-the-art GaAs based 2D electron systems microwave induced photo-current and photo-voltage oscillations around zero as a function of the applied magnetic field. The photo-signals pass zero whenever the microwave frequency is close to a multiple of the cyclotron resonance frequency. They originate from built-in electric fields due to for instance band bending at contacts. The oscillations correspond to a suppression (screening) or an enhancement ("anti-screening") of these fields by the photo-excited electrons.

cond-mat.mes-hall↗

arXiv2008

The Cyclotron Spin-Flip Mode as the Lowest-Energy Excitation of Unpolarized Integer Quantum Hall States

The cyclotron spin-flip modes of spin unpolarized integer quantum Hall states ($ν=2,4$) have been studied with inelastic light scattering. The energy of these modes is significantly smaller compared to the bare cyclotron gap. Second order exchange corrections are held responsible for a negative energy contribution and render these modes the lowest energy excitations of unpolarized integer quantum Hall states.

cond-mat.mes-hall↗

arXiv2007

Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor

The electronic density of states of graphene is equivalent to that of relativistic electrons. In the absence of disorder or external doping the Fermi energy lies at the Dirac point where the density of states vanishes. Although transport measurements at high carrier densities indicate rather high mobilities, many questions pertaining to disorder remain unanswered. In particular, it has been argued theoretically, that when the average carrier density is zero, the inescapable presence of disorder will lead to electron and hole puddles with equal probability. In this work, we use a scanning single electron transistor to image the carrier density landscape of graphene in the vicinity of the neutrality point. Our results clearly show the electron-hole puddles expected theoretically. In addition, our measurement technique enables to determine locally the density of states in graphene. In contrast to previously studied massive two dimensional electron systems, the kinetic contribution to the density of states accounts quantitatively for the measured signal. Our results suggests that exchange and correlation effects are either weak or have canceling contributions.

cond-mat.mes-hall↗

arXiv2006

Microwave induced magnetoresistance oscillations at the subharmonics of the cyclotron resonance

The magnetoresistance oscillations, which occur in a two-dimensional electron system exposed to strong microwave radiation when the microwave frequency $ω$ coincides with the n-th subharmonic of the cyclotron frequency $ω_c$ have been investigated for n = 2, 3 and 4. It is shown that these subharmonic features can be explained within a non-equilibrium energy distribution function picture without invoking multi-photon absorption processes. The existence of a frequency threshold above which such oscillations disappear lends further support to this explanation.

cond-mat.mes-hall↗

arXiv2005

Circular polarization dependent study of the microwave photoconductivity in a two-dimensional electron system

The polarization dependence of the low field microwave photoconductivity and absorption of a two-dimensional electron system has been investigated in a quasi-optical setup in which linear and any circular polarization can be produced in-situ. The microwave induced resistance oscillations and the zero resistance regions are notedly immune to the sense of circular polarization. This observation is discrepant with a number of proposed theories. Deviations only occur near the cyclotron resonance absorption where an unprecedented large resistance response is observed.

cond-mat.mes-hall↗

arXiv2004

Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.

cond-mat.mes-hall↗

arXiv2004

Microwave photoresponse in the 2D electron system caused by intra-Landau level transitions

The influence of microwave radiation on the DC-magnetoresistance of 2D-electrons is studied in the regime beyond the recently discovered zero resistance states when the cyclotron frequency exceeds the radiation frequency. Radiation below 30 GHz causes a strong suppression of the resistance over a wide magnetic field range, whereas higher frequencies produce a non-monotonic behavior in the damping of the Shubnikov-de Haas oscillations. These observations are explained by the creation of a non-equilibrium electron distribution function by microwave induced intra-Landau level transitions.

cond-mat.mes-hall↗

arXiv2004

Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices

We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, $R_{xy}$, that correlates with an increase in the diagonal resistance, $R_{xx}$, and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.

cond-mat.mes-hall↗

arXiv2004

Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices

We suggest an approach for characterizing the zero-field spin splitting of high mobility two-dimensional electron systems, when beats are not readily observable in the Shubnikov-de Haas effect. The zero-field spin splitting and the effective magnetic field seen in the reference frame of the electron is evaluated from a quantitative study of beats observed in radiation-induced magnetoresistance oscillations.

cond-mat.mes-hall↗

arXiv2004

Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices

We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independent 1/4 cycle phase shift with respect to the $hf = j\hbarω_{c}$ condition for $j \geq 1$, and they also suggest a small ($\approx$ 2%) reduction in the effective mass ratio, $m^{*}/m$, with respect to the standard value for GaAs/AlGaAs devices.

cond-mat.mes-hall↗