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Local and Reversible Change of the Reconstruction on Ge(001) Surface between c(4x2) and p(2x2) by Scanning Tunneling Microscopy

Yasumasa Takagi·Yoshihide Yoshimoto·Kan Nakatsuji·Fumio Komori
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Abstract

The reconstruction on Ge(001) surface is locally and reversibly changed between c(4x2) and p(2x2) by controlling the bias voltage of a scanning tunneling microscope (STM) at 80K. It is c(4x2) with the sample bias voltage V_b =< -0.7V. This structure can be kept with V_b =< 0.6V. When V_b is higher than 0.8V during the scanning, the structure changes to p(2x2). This structure is then maintained with V_b >= - 0.6V. The observed local change of the reconstruction with hysteresis is ascribed to inelastic scattering during the electron tunneling in the electric field under the STM-tip.

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Yasumasa Takagi, Yoshihide Yoshimoto, Kan Nakatsuji, Fumio Komori. 2003-03-25. Local and Reversible Change of the Reconstruction on Ge(001) Surface between c(4x2) and p(2x2) by Scanning Tunneling Microscopy. https://doi.org/10.1143/jpsj.72.2425

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