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Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

R. G. Mani·V. Narayanamurti·K. von Klitzing·J. H. Smet·W. B. Johnson·V. Umansky
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Abstract

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.

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R. G. Mani, V. Narayanamurti, K. von Klitzing, J. H. Smet, W. B. Johnson, V. Umansky. 2004-11-01. Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima. https://doi.org/10.1103/physrevb.70.155310

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