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Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

K. Ueno·I. H. Inoue·H. Akoh·M. Kawasaki·Y. Tokura·H. Takagi
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Abstract

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV.

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K. Ueno, I. H. Inoue, H. Akoh, M. Kawasaki, Y. Tokura, H. Takagi. 2003-06-17. Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator. https://doi.org/10.1063/1.1605806

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