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Atomically precise placement of single dopants in Si

S. R. Schofield·N. J. Curson·M. Y. Simmons·F. J. Ruess·T. Hallam·L. Oberbeck·R. G. Clark
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Abstract

We demonstrate the controlled incorporation of P dopant atoms in Si (001) presenting a new path toward the creation of atomic-scale electronic devices. We present a detailed study of the interaction of PH3 with Si (001) and show that it is possible to thermally incorporate P atoms into Si (001) below the H desorption temperature. Control over the precise spatial location at which P atoms are incorporated was achieved using STM H-lithography. We demonstrate the positioning of single P atoms in Si with ~ 1 nm accuracy and the creation of nanometer wide lines of incorporated P atoms.

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S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Ruess, T. Hallam, L. Oberbeck, R. G. Clark. 2003-07-24. Atomically precise placement of single dopants in Si. https://doi.org/10.1103/physrevlett.91.136104

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