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Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices

R. G. Mani·J. H. Smet·K. von Klitzing·V. Narayanamurti·W. B. Johnson·V. Umansky
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Abstract

We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independent 1/4 cycle phase shift with respect to the $hf = j\hbarω_{c}$ condition for $j \geq 1$, and they also suggest a small ($\approx$ 2%) reduction in the effective mass ratio, $m^{*}/m$, with respect to the standard value for GaAs/AlGaAs devices.

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R. G. Mani, J. H. Smet, K. von Klitzing, V. Narayanamurti, W. B. Johnson, V. Umansky. 2004-04-29. Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices. https://doi.org/10.1103/physrevlett.92.146801

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