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Single Crystal Growth of Skutterudite CoP3 under High Pressure

C. H. Lee·H. Kito·H. Ihara·K. Akita·N. Yanase·C. Sekine·I. Shirotani
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Abstract

A new method to grow single crystals of skutterudite compounds is examined. Using a wedge-type, cubic-anvil, high-pressure apparatus, single crystals of CoP3 were grown from stoichiometric melts under a pressure of 3.5 GPa. Powder x-ray diffraction and electron probe microanalysis measurements indicate that the as-grown boules are a single phase of CoP3. The results suggest that CoP3 is a congruent melting compound under high pressure.

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C. H. Lee, H. Kito, H. Ihara, K. Akita, N. Yanase, C. Sekine, I. Shirotani. 2003-12-02. Single Crystal Growth of Skutterudite CoP3 under High Pressure. https://doi.org/10.1016/j.jcrysgro.2003.11.111

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