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Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy

A. M. Yakunin·A. Yu. Silov·P. M. Koenraad·J. H. Wolter·W. Van Roy·J. De Boeck
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Abstract

An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.

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A. M. Yakunin, A. Yu. Silov, P. M. Koenraad, J. H. Wolter, W. Van Roy, J. De Boeck. 2004-06-06. Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy. https://doi.org/10.1016/j.spmi.2004.03.055

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