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Observing sub-microsecond telegraph noise with the radio frequency single electron transistor

T. M. Buehler·D. J. Reilly·R. P. Starrett·V. C. Chan·A. R. Hamilton·A. S. Dzurak·R. G. Clark
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Abstract

Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charge-based quantum computing, this noise may lead to decoherence and loss of read out fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe micro-second telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.

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T. M. Buehler, D. J. Reilly, R. P. Starrett, V. C. Chan, A. R. Hamilton, A. S. Dzurak, R. G. Clark. 2004-09-22. Observing sub-microsecond telegraph noise with the radio frequency single electron transistor. https://doi.org/10.1063/1.1813619

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