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Kondo Effect in Electromigrated Gold Break Junctions

A. A. Houck·J. Labaziewicz·E. K. Chan·J. A. Folk·I. L. Chuang
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Abstract

We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures \~7K. The peak splitting in magnetic field is consistent with theoretical predictions for g=2, though in many devices the splitting is offset from 2guB by a fixed energy. The Kondo resonances observed here may be due to atomic-scale metallic grains formed during electromigration.

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A. A. Houck, J. Labaziewicz, E. K. Chan, J. A. Folk, I. L. Chuang. 2004-10-28. Kondo Effect in Electromigrated Gold Break Junctions. https://doi.org/10.1021/nl050799i

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