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Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As

S. C. Masmanidis·H. X. Tang·E. B. Myers·Mo Li·K. De Greve·G. Vermeulen·W. Van Roy·M. L. Roukes
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Abstract

A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can be simultaneously mapped over a wide range of temperatures. These results, when compared with theoretical predictions, appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

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S. C. Masmanidis, H. X. Tang, E. B. Myers, Mo Li, K. De Greve, G. Vermeulen, W. Van Roy, M. L. Roukes. 2005-05-10. Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As. https://doi.org/10.1103/physrevlett.95.187206

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