arXiv subjects

K. De Greve

Publications and source records attributed to K. De Greve.

11 recordsLinked to original sources

arXiv2026

Ultra-high Q-factor superconducting tantalum resonators on 300 mm Si wafers

Superconducting resonators are central to superconducting quantum information technologies and essential for bosonic qubit architectures, where long-lived storage modes enable hardware-efficient error correction. Achieving ultra-high quality factors in scalable planar circuits is challenging because multiple dissipation channels contribute to the total loss. Here we report planar $α$-Ta resonators fabricated on 300 mm ultra-high-resistivity ($>10$ k$Ω$ cm) intrinsic silicon using industrial processes, achieving median internal Q factors exceeding 40 million and maxima above 60 million. Energy-participation-ratio analysis identifies a dominant participation-controlled interface loss mechanism and places conservative upper bounds on substrate-associated dissipation. For the best-performing substrate, the inferred substrate loss tangent is below $1.0 \times 10^{-8}$, establishing industrial MCZ silicon among the lowest-loss substrate platforms reported for superconducting resonators. At the same time, the exceptionally low losses show no clear correlation with commonly cited silicon substrate metrics such as room-temperature resistivity or impurity concentrations. More broadly, these studies establish industrial 300 mm processing, careful interface engineering, and 300 mm MCZ silicon substrates as a promising platform for resonator-heavy superconducting quantum architectures with ultra-high quality factors.

quant-ph↗

arXiv2026

Broadband Magnetless Isolation in a Flux-Pumped, Dispersion-Engineered Transmission Line

Isolators are commonly found in the amplification chain of microwave setups to shield sensitive devices such as superconducting qubits from noise and back-scattered signals. Conventional ferrite-based isolators are bulky, lossy and rely on strong magnetic fields, which pose challenges for their co-integration in large-scale superconducting devices. Although several magnetless approaches based on parametric modulation have been explored to overcome these limitations, none has yet experimentally demonstrated wideband isolation on par with ferrite devices. Here, we propose a compact modulation-based isolator that achieves large isolation bandwidth using a dispersion-engineered transmission line. The engineered line forms an effective two-mode system that enables broadband isolation by supporting adiabatic mode conversion over a wide instantaneous bandwidth. Numerical simulations show that this architecture can provide more than 20 dB isolation across 4 - 8 GHz, matching the performance of ferrite-based isolators. Moreover, we propose an on-chip superconducting device implementation that shows promise against parameter variations and enables a scalable path for co-integration with future large-scale superconducting systems.

quant-ph↗

arXiv2025

Reversing Hydrogen-Related Loss in $α$-Ta Thin Films for Quantum Device Fabrication

$α$-Tantalum ($α$-Ta) is an emerging material for superconducting qubit fabrication due to the low microwave loss of its stable native oxide. However, hydrogen absorption during fabrication, particularly when removing the native oxide, can degrade performance by increasing microwave loss. In this work, we demonstrate that hydrogen can enter $α$-Ta thin films when exposed to 10 vol% hydrofluoric acid for 3 minutes or longer, leading to an increase in power-independent ohmic loss in high-Q resonators at millikelvin temperatures. Reduced resonator performance is likely caused by the formation of non-superconducting tantalum hydride (TaH$_x$) precipitates. We further show that annealing at 500°C in ultra-high vacuum (10$^{-8}$ Torr) for one hour fully removes hydrogen and restores the resonators' intrinsic quality factors to ~4 million at the single-photon level. These findings identify a previously unreported loss mechanism in $α$-Ta and offer a pathway to reverse hydrogen-induced degradation in quantum devices based on Ta and, by extension also Nb, enabling more robust fabrication processes for superconducting qubits.

quant-ph↗

arXiv2025

Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot

Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolithically integrated SET placed next to a double quantum dot in a Si/SiGe heterostructure is wire-bonded to a superconducting niobium inductor forming the impedance-transforming network. Compared to RF reflectometry, the proposed set-up is experimentally simpler without the need for directional couplers. Read-out performance is benchmarked by the signal-to-noise (SNR) of a dot-reservoir transition (DRT) and an interdot charge transition (ICT) in the double quantum dot near the SET as a function of RF power and integration time. The minimum integration time for unitary SNR is found to be 100 ns for ICT and 300 ns for DRT. The obtained minimum integration times are comparable to the state of the art in conventional RF reflectometry set-ups. Furthermore, we study the turn-on properties of the RF-SET to investigate capacitive shifts and RF losses. Understanding these effects are crucial for further optimisations of the impedance transforming network as well as the device design to assist RF read-out. This new RF read-out scheme also shows promise for multiplexing spin-qubit readout and further studies on rapid charge dynamics in quantum dots.

cond-mat.mes-hall↗

arXiv2025

A trilinear quantum dot architecture for semiconductor spin qubits

Semiconductor quantum dot spin qubits hold significant potential for scaling to millions of qubits for practical quantum computing applications, as their structure highly resembles the structure of conventional transistors. Since classical semiconductor manufacturing technology has reached an unprecedented level of maturity, reliably mass-producing CMOS chips with hundreds of billions of components, conventional wisdom dictates that leveraging CMOS technologies for quantum dot qubits can result in upscaled quantum processors with thousands or even millions of interconnected qubits. However, the interconnect requirements for quantum circuits are very different from those for classical circuits, where for each qubit individual control and readout wiring could be needed. Although significant developments have been demonstrated on small scale systems, qubit numbers remain limited, to a large extent due to the lack of scalable qubit interconnect schemes. Here, we present a trilinear quantum dot array that is simple in physical layout while allowing individual wiring to each quantum dot. By means of electron shuttling, the trilinear architecture provides qubit connectivity that is equivalent to or even surpasses that of 2D square lattice. Assuming the current qubit fidelities of small-scale devices can be extrapolated to large-scale arrays, medium-length shuttling arrays on the order of tens of microns would allow million-scale qubit systems, while maintaining manageable overheads. We also present a scalable control scheme, where the qubit chip is 3D-integrated with a low-power switch-based cryoCMOS circuit for parallel qubit operation with limited control inputs. As our trilinear quantum dot array is fully compatible with existing semiconductor technologies, this qubit architecture represents one possible framework for future research and development of large-scale spin qubit systems.

quant-ph↗

arXiv2025

Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs

The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobility measurements on silicon Hall bars. We find a peak electron mobility of nearly $40,000\,\text{cm}^2/\text{Vs}$ in a device with a $21\,\text{nm}$ oxide layer, and a peak hole mobility of about $2,000\,\text{cm}^2/\text{Vs}$ in a device with $8\,\text{nm}$ oxide, the latter being the highest recorded mobility for a p-type silicon MOSFET. Despite the high device quality, we note an order-of-magnitude difference in mobility between electrons and holes. By studying additional n-type and p-type devices with identical oxides, and fitting to transport theory, we show that this mobility discrepancy is due to valence band nonparabolicity. The nonparabolicity endows holes with a density-dependent transverse effective mass ranging from $0.6m_0$ to $0.7m_0$, significantly larger than the usually quoted bend-edge mass of $0.22m_0$. Finally, we perform magnetotransport measurements to extract momentum and quantum scattering lifetimes.

cond-mat.mes-hall↗

arXiv2023

Argon milling induced decoherence mechanisms in superconducting quantum circuits

The fabrication of superconducting circuits requires multiple deposition, etch and cleaning steps, each possibly introducing material property changes and microscopic defects. In this work, we specifically investigate the process of argon milling, a potentially coherence limiting step, using niobium and aluminum superconducting resonators as a proxy for surface-limited behavior of qubits. We find that niobium microwave resonators exhibit an order of magnitude decrease in quality-factors after surface argon milling, while aluminum resonators are resilient to the same process. Extensive analysis of the niobium surface shows no change in the suboxide composition due to argon milling, while two-tone spectroscopy measurements reveal an increase in two-level system electrical dipole moments, indicating a structurally altered niobium oxide hosting larger two-level system defects. However, a short dry etch can fully recover the argon milling induced losses on niobium, offering a potential route towards state-of-the-art overlap Josephson junction qubits with niobium circuitry.

quant-ph↗

arXiv2022

Manufacturing high-Q superconducting α-tantalum resonators on silicon wafers

The performance of state-of-the-art superconducting quantum devices is currently limited by microwave dielectric losses at different surfaces and interfaces. α-tantalum is a superconductor that has proven effective in reducing dielectric loss and improving device performance due to its thin low-loss oxide. However, without the use of a seed layer, this tantalum phase has so far only been realised on sapphire substrates, which is incompatible with advanced processing in industry-scale fabrication facilities. Here, we demonstrate the fabrication of high-quality factor α-tantalum resonators directly on silicon wafers over a variety of metal deposition conditions and perform a comprehensive material and electrical characterization study. By comparing experiments with simulated resonator loss, we demonstrate that two-level-system loss is dominated by surface oxide contributions and not the substrate-metal interface. Our study paves the way to large scale manufacturing of low-loss superconducting circuits and to materials-driven advancements in superconducting circuit performance.

quant-ph↗

arXiv2014

Sub-nanometer resolution in three-dimensional magnetic-resonance imaging of individual dark spins

Magnetic resonance imaging (MRI) has revolutionized biomedical science by providing non-invasive, three-dimensional biological imaging. However, spatial resolution in conventional MRI systems is limited to tens of microns, which is insufficient for imaging on molecular and atomic scales. Here we demonstrate an MRI technique that provides sub-nanometer spatial resolution in three dimensions, with single electron-spin sensitivity. Our imaging method works under ambient conditions and can measure ubiquitous 'dark' spins, which constitute nearly all spin targets of interest and cannot otherwise be individually detected. In this technique, the magnetic quantum-projection noise of dark spins is measured using a single nitrogen-vacancy (NV) magnetometer located near the surface of a diamond chip. The spatial distribution of spins surrounding the NV magnetometer is imaged with a scanning magnetic-field gradient. To evaluate the performance of the NV-MRI technique, we image the three-dimensional landscape of dark electronic spins at and just below the diamond surface and achieve an unprecedented combination of resolution (0.8 nm laterally and 1.5 nm vertically) and single-spin sensitivity. Our measurements uncover previously unidentified electronic spins on the diamond surface, which can potentially be used as resources for improved magnetic imaging of samples proximal to the NV-diamond sensor. This three-dimensional NV-MRI technique is immediately applicable to diverse systems including imaging spin chains, readout of individual spin-based quantum bits, and determining the precise location of spin labels in biological systems.

cond-mat.mes-hall↗

arXiv2010

Photon Antibunching and Magnetospectroscopy of a Single Fluorine Donor in ZnSe

We report on the optical investigation of single electron spins bound to fluorine donor impurities in ZnSe. Measurements of photon antibunching establish the presence of single, isolated optical emitters, and magneto-optical studies are consistent with the presence of an exciton bound to the spin-impurity complex. The isolation of this single donor-bound exciton complex and its potential homogeneity offer promising prospects for a scalable semiconductor qubit with an optical interface.

quant-ph↗

arXiv2005

Nanomechanical Measurements of Magnetostriction and Magnetic Anisotropy in (Ga,Mn)As

A (Ga,Mn)As nanoelectromechanical resonator is used to obtain the first direct measurement of magnetostriction in a dilute magnetic semiconductor. Field-dependent magnetoelastic stress induces shifts in resonance frequency that can be discerned with a high resolution electromechanical transduction scheme. By monitoring the field dependence, the magnetostriction and anisotropy field constants can be simultaneously mapped over a wide range of temperatures. These results, when compared with theoretical predictions, appear to provide insight into a unique form of magnetoelastic behavior mediated by holes.

cond-mat.soft↗