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Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method

S. Chromik·J. Huran·V. Strbik·M. Spankova·I. Vavra·W. Bohne·J. Rohrich·E. Strub·P. Kovac·S. Stancek
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Abstract

MgB2 thin films were deposited on SiC buffered Si substrates by sequential electron beam evaporation of B-Mg bilayer followed by in-situ annealing. The application of a SiC buffer layer enables the maximum annealing temperature of 830 C. The Transmission Electron Microscopy analysis confirms the growth of a nanogranular MgB2 film and the presence of a Mg2Si compound at the surface of the film. The 150-200 nm thick films show a maximum zero resistance critical temperature TC0 above 37 K and a critical current density JC ~ 106 A/cm2 at 11K.

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S. Chromik, J. Huran, V. Strbik, M. Spankova, I. Vavra, W. Bohne, J. Rohrich, E. Strub, P. Kovac, S. Stancek. 2005-07-22. Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method. https://doi.org/10.1088/0953-2048%2F19%2F6%2F027

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