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Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

Takashi Oka·Naoto Nagaosa
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Abstract

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semi-conductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.

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Takashi Oka, Naoto Nagaosa. 2005-09-18. Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance. https://doi.org/10.1103/physrevlett.95.266403

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