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arXiv · cond-mat/0509652

Mobility gap in intermediate valent TmSe

Abstract

The infrared optical conductivity of intermediate valence compound TmSe reveals clear signatures for hybridization of light $d$- and heavy f-electronic states with m* ~ 1.6 m_0 and m* ~ 16 m_0, respectively. At moderate and high temperatures, the metal-like character of the heavy carriers dominate the low-frequency response while at low temperatures (T_N < T < 100 K) a gap-like feature is observed in the conductivity spectra below 10 meV which is assigned to be a mobility gap due to localization of electrons on local Kondo singlets, rather than a hybridization gap in the density of states.

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M. Dumm, B. Gorshunov, M. Dressel, T. Matsumura. 2005-09-26. Mobility gap in intermediate valent TmSe. https://doi.org/10.1209/epl%2Fi2005-10207-y

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