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An ion-implanted silicon single-electron transistor

V. C. Chan·D. R. McCamey·T. M. Buehler·A. J. Ferguson·D. J. Reilly·A. S. Dzurak·R. G. Clark·C. Yang·D. N. Jamieson
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Abstract

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads of the Si-SET are formed by the implantation of phosphorus ions to a density above the metal-insulator-transition, with the tunnel junctions created by undoped regions. Surface gates above each of the tunnel junctions independently control the tunnel coupling between the Si-SET island and leads. The device shows periodic Coulomb blockade with a charging energy e$^2$/2C$_Σ$ $\sim$ 250 $μ$eV, and demonstrates a reproducible and controllable pathway to a silicon-based SET using CMOS processing techniques.

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V. C. Chan, D. R. McCamey, T. M. Buehler, A. J. Ferguson, D. J. Reilly, A. S. Dzurak, R. G. Clark, C. Yang, D. N. Jamieson. 2005-10-14. An ion-implanted silicon single-electron transistor. https://arxiv.org/abs/cond-mat/0510373

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