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Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells

N. S. Averkiev·L. E. Golub·A. S. Gurevich·V. P. Evtikhiev·V. P. Kochereshko·A. V. Platonov·A. S. Shkolnik·Yu. P. Efimov
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Abstract

Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic directions are extracted demonstrating anisotropy of D'yakonov-Perel' spin relaxation mechanism. The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well structures. It is shown that the Rashba spin-orbit splitting is about four times stronger than the Dresselhaus splitting in the studied structure.

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N. S. Averkiev, L. E. Golub, A. S. Gurevich, V. P. Evtikhiev, V. P. Kochereshko, A. V. Platonov, A. S. Shkolnik, Yu. P. Efimov. 2006-01-12. Observation of Spin Relaxation Anisotropy in Semiconductor Quantum Wells. https://doi.org/10.1103/physrevb.74.033305

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