Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

H. B. de Carvalho; M. J. S. P. Brasil; V. Lopez-Richard; I. Camps; Y. Galvao Gobato; G. E. Marques; L. C. O. Dacal; M. Henini; L. Eaves; G. Hill

doi:10.1103/physrevb.74.041305

arXiv · cond-mat/0601421

Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

H. B. de Carvalho·M. J. S. P. Brasil·V. Lopez-Richard·I. Camps·Y. Galvao Gobato·G. E. Marques·L. C. O. Dacal·M. Henini·L. Eaves·G. Hill

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Abstract

We report experimental evidence of excitonic spin-splitting, in addition to the conventional Zeeman effect, produced by a combination of the Rashba spin-orbit interaction, Stark shift and charge screening. The electric-field-induced modulation of the spin-splitting are studied during the charging and discharging processes of p-type GaAs/AlAs double barrier resonant tunneling diodes (RTD) under applied bias and magnetic field. The abrupt changes in the photoluminescence, with the applied bias, provide information of the charge accumulation effects on the device.

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H. B. de Carvalho, M. J. S. P. Brasil, V. Lopez-Richard, I. Camps, Y. Galvao Gobato, G. E. Marques, L. C. O. Dacal, M. Henini, L. Eaves, G. Hill. 2006-01-18. Electric field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices. https://doi.org/10.1103/physrevb.74.041305

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