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Phosphorus donors in highly strained silicon

Hans Huebl·Andre R. Stegner·Martin Stutzmann·Martin S. Brandt·Guenther Vogg·Frank Bensch·Eva Rauls·Uwe Gerstmann
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Abstract

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si$_{1-x}$Ge$_x$ substrates with $x\leq 0.3$ is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory (DFT) shows that the additional reduction is caused by the volume increase of the unit cell and a local relaxation of the Si ligands of the P donor.

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Hans Huebl, Andre R. Stegner, Martin Stutzmann, Martin S. Brandt, Guenther Vogg, Frank Bensch, Eva Rauls, Uwe Gerstmann. 2006-07-27. Phosphorus donors in highly strained silicon. https://doi.org/10.1103/physrevlett.97.166402

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